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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 3 A 800 V Enhancement 3-Pin TO-220 STP4NK80ZFP
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.3mm |
| Length | 10.4mm |
| Model | STP4NK80ZFP |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 3.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 22.5nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Enhancement mode N-channel MOSFET with robust MDmesh SuperMESH design.
- Provides maximum power dissipation rating of 25 W.
- Maximum drain-source resistance (Rds) is 3.5 ohms for efficient switching.
- Operates reliably from -55°C to 150°C temperature range.
- Typical gate charge is 22.5 nC at gate-source voltage of 10 V for fast switching.
- Maximum gate-source voltage rating is ±30 V.
- Package designed for through-hole mounting providing sturdy mechanical connection.
- Forward voltage drop of 1.6 V ensuring low conduction losses.
Product Description
STMicroelectronics STP4NK80ZFP is a MDmesh SuperMESH N-Channel Enhancement MOSFET designed for efficient power switching applications. With a continuous drain current of 3 A and a high voltage rating of 800 V, this component suits industrial, electronic power management, and semiconductor circuits.
The device comes in a durable 3-pin TO-220 package optimized for through-hole mounting, providing mechanical stability and ease of integration into printed circuit boards. Its robust MDmesh SuperMESH construction improves current handling and thermal performance, making it suitable for demanding industrial and HVAC control environments.
STP4NK80ZFP operates safely over a wide temperature range from -55°C to 150°C, ensuring reliability in varied ambient conditions. Its low maximum drain-source resistance of 3.5 Ω contributes to efficient switching and reduced heat generation.
The MOSFET features a maximum power dissipation of 25 W, typical gate charge of 22.5 nC at 10 V gate drive, and a gate-source voltage range of ±30 V, facilitating fast switching and strong gate control. Its forward voltage drop is 1.6 V, minimizing conduction losses during operation.
This component is widely applicable in industrial motor controllers, power supplies, manufacturing automation, and laboratory electronic module designs. Although it is not compliant with automotive standards, it excels in robust power electronics demanding high voltage and current endurance.
Enhancement mode N-channel MOSFET with reliable MDmesh SuperMESH technology. 3 A maximum continuous drain current with 800 V drain-source voltage capacity. Through-hole 3-pin TO-220 package for easy installation. Operational temperature range from -55°C to 150°C for broad use cases.
Low Rds(on) of 3.5 Ω ensures energy-efficient switching. Maximum power dissipation rating of 25 W for stable thermal management. Gate charge of 22.5 nC enables rapid switching response. Forward voltage drop of 1.6 V contributes to reduced power loss.
Ideal for industrial, manufacturing, HVAC, and electronic power circuits. Explore more power semiconductor components and MOSFETs from STMicroelectronics at EnvMart for your industrial and electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current of the STP4NK80ZFP is 3 A.
This model has a maximum drain-source voltage rating of 800 V.
It operates reliably over a temperature range from -55°C to 150°C.
The maximum power dissipation rating for this unit is 25 W.
The maximum drain-source resistance (Rds) is 3.5 ohms.
It comes in a 3-pin TO-220 package designed for through-hole mounting.
The typical gate charge is 22.5 nC at a gate-source voltage of 10 V.
The forward voltage drop is 1.6 V, which helps minimize conduction losses.
The maximum gate-source voltage rating is ±30 V.
The dimensions are 10.4 mm in length, 4.6 mm in width, and 9.3 mm in height.
It is widely applicable in industrial motor controllers, power supplies, manufacturing automation, and laboratory electronic modules.
This model features an N-channel configuration, suitable for enhancement mode operation.
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