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STMicroelectronics Isolated STripFET 2 N-Channel Power MOSFET 4 A 60 V Enhancement Mode 8-Pin SOIC STS4DNF60L
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 1.25mm |
| Length | 5mm |
| Model | STS4DNF60L |
| Width | 4mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 55mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | -15, +15V |
| Transistor Configuration | Isolated |
Key Features
- Dual N-Channel configuration with isolated transistor architecture.
- Enhancement mode operation ensures reliable switching performance.
- Low on-resistance Rds(on) at 55 milliohm for reduced conduction losses.
- Ultra-low typical gate charge of 15 nC enhances switching efficiency.
- Package is compact 8-pin SOIC surface mount for easy PCB integration.
- Maximum power dissipation of 2 Watts supports robust thermal management.
- Wide operating temperature range from -55°C up to +150°C.
- Transistor height of 1.25 mm, length 5 mm, and width 4 mm for compact design footprint.
Product Description
STMicroelectronics STS4DNF60L Isolated STripFET™ 2 N-Channel Power MOSFET is a high-performance transistor designed for power switching and amplification applications in electronic circuits. With a maximum continuous drain current of 4 A and a drain-source voltage rating of 60 V, this device supports a wide range of power management functions.
The dual N-Channel MOSFET structure provides isolated transistor elements ensuring reduced interference and enhanced performance. The enhancement mode channel type facilitates reliable and efficient switching operations, suitable for power supplies, motor drivers, and other industrial electronics.
This MOSFET is supplied in an 8-pin SOIC surface mount package, optimizing board space and enabling easy integration in automated assembly environments. It features ultra-low typical gate charge of 15 nC and low drain-source resistance of 55 mΩ, which lowers power loss and improves switching efficiency.
Robust in thermal performance, the device can operate from -55°C to +150°C, making it suitable for demanding industrial and automotive applications. The transistor dimensions are compact with a height of 1.25 mm, length 5 mm, and width 4 mm, supporting miniaturized circuit designs.
Dual Isolated STripFET™ N-Channel MOSFET devices. Enhancement type channel for efficient switching. Maximum continuous drain current of 4 Amperes. Drain-source voltage up to 60 Volts. Low maximum drain-source resistance of 55 milliohms.
Typical gate charge of 15 nanocoulombs at operating voltage. Compact 8-pin SOIC surface mount package. Wide operating temperature range from -55°C up to +150°C. Manufactured in China adhering to quality and reliability standards.
This Power MOSFET is ideal for industrial power electronics, commercial equipment, and electronic component manufacturing. It fits applications including power conversion, motor controls, and circuit protection.
Explore more STMicroelectronics high-performance semiconductor products in the Electronics & Electricals > Discrete Semiconductors > Power MOSFET category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4 Amperes.
This power MOSFET has a drain-source voltage rating of 60 Volts.
The typical gate charge for this MOSFET is 15 nanocoulombs.
The maximum power dissipation for this model is 2 Watts.
The dimensions of this MOSFET are 1.25 mm in height, 5 mm in length, and 4 mm in width.
It is supplied in an 8-pin SOIC surface mount package.
The operating temperature range is from -55°C to +150°C.
This device features an enhancement mode channel type.
The maximum drain-source resistance is 55 milliohms, which helps reduce conduction losses and improve efficiency.
This power MOSFET is suitable for applications such as power conversion, motor controls, and circuit protection.
The transistor configuration is dual N-Channel with isolated elements.
The isolated transistor architecture reduces interference and enhances performance in power management applications.
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