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STMicroelectronics STripFET II N-Channel MOSFET, 80 A, 100 V Enhancement, TO-220, 3-Pin STP80NF10
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP80NF10 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 15mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 135nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Encapsulated in a durable TO-220 package suitable for through-hole mounting.
- Features ultra-low on-resistance of 15mΩ ensuring efficient conduction.
- Operates efficiently at temperatures ranging from -55°C to 175°C.
- Incorporates enhancement mode channel operation for controllable switching.
- Offers maximum power dissipation of 300 W for high power applications.
- Provides typical gate charge of 135 nC at Vgs enhancing switching speed.
- Supports gate-source voltage up to ±20 V for robust control.
- Compact dimensions of 10.4 mm length, 9.15 mm height, and 4.6 mm width.
Product Description
STMicroelectronics STP80NF10 STripFET II N-Channel MOSFET provides high-performance power switching capability with continuous drain current of 80 A and drain-source voltage rating of 100 V. Encased in a TO-220 3-pin package, this device supports through-hole mounting, allowing easy integration into power circuits for industrial and electronic applications.
With an ultra-low maximum drain-source resistance of 15 mΩ, the MOSFET ensures minimal conduction losses, resulting in better efficiency. The enhancement mode channel supports precise control over switching operations.
Operating reliably over a wide temperature range from -55°C to a maximum of 175°C, this component withstands demanding environmental conditions. It also features a maximum power dissipation of 300 W suitable for medium to high power applications.
The typical gate charge of 135 nC at gate-source voltage Vgs enables fast and efficient switching, while the maximum gate-source voltage of ±20 V provides robustness in controlling the MOSFET gate.
Physical dimensions of 10.4 mm by 9.15 mm by 4.6 mm make the device compact enough for space-constrained designs while maintaining standard form factor compatibility.
Although this MOSFET lacks specific automotive certifications, it performs excellently in industrial power management, motor control, and other electronic switching systems that require fast, efficient, and reliable power transistors.
Encapsulated in TO-220 package for through-hole mounting. Maximum continuous drain current of 80 A ensures high load capabilities. Low on-resistance of 15 mΩ reduces conduction losses. Power dissipation capacity of 300 W suitable for demanding applications.
Wide operating temperature range from -55°C to 175°C. Typical gate charge of 135 nC for fast switching. Gate-source voltage tolerance of ±20 V enhances control reliability. Compact size dimensions facilitate versatile circuit integration.
Ideal for industrial, power electronics, and embedded systems usage. Not certified for automotive applications but suitable for commercial electronics. Explore more about STMicroelectronics products and MOSFETs category in EnvMart to find compatible components for your electronic projects and power management needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 80 A, allowing it to handle significant load capabilities in power applications.
The STP80NF10 has a maximum drain-source voltage rating of 100 V, making it suitable for various electronic switching applications.
This MOSFET features an ultra-low maximum drain-source resistance of 15 mΩ, which helps reduce conduction losses during operation.
It operates efficiently over a wide temperature range from -55°C to 175°C, making it suitable for demanding environments.
The typical gate charge is 135 nC at the gate-source voltage, which enhances the switching speed of the device.
It is encapsulated in a TO-220 package, which is designed for through-hole mounting in electronic circuits.
The maximum power dissipation capacity is 300 W, making it suitable for medium to high power applications.
This model supports a maximum gate-source voltage of ±20 V, providing robust control over the MOSFET's operation.
The physical dimensions are 10.4 mm in length, 9.15 mm in height, and 4.6 mm in width, making it compact for various circuit designs.
The STP80NF10 features an N-channel configuration, which is common for power MOSFET applications.
It is suitable for industrial power management, motor control, and other electronic switching systems that require efficient power transistors.
This MOSFET has a pin count of 3, which is standard for its TO-220 package type.
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