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STMicroelectronics STripFET II N-Channel MOSFET 38 A 60 V Enhancement 3-Pin TO-220 STP45NF06
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP45NF06 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 38A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 28mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 80W |
| Typical Gate Charge Qg @ Vgs | 32nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Maximum continuous drain current of 38 A for high current handling.
- Maximum drain-source voltage rating of 60 V suitable for medium voltage circuits.
- TO-220 package with 3 pins enables through-hole mounting and efficient heat dissipation.
- Low on-resistance of 28 mΩ reduces power losses during conduction.
- Enhancement mode N-channel device with a maximum gate-source voltage of ±20 V.
- Forward voltage drop of 1.5 V ensures efficient transistor operation.
- Typical gate charge of 32 nC facilitates fast switching speeds.
- Operating temperature range from -55°C up to 175°C allows use in harsh environments.
Product Description
STMicroelectronics STP45NF06 is a STripFET™ II type N-Channel MOSFET transistor optimized for high-efficiency power switching applications. It is designed with a robust package and a wide voltage and current rating for industrial and commercial electronics.
The device features a maximum continuous drain current of 38 A and can handle voltages up to 60 V, making it suitable for power management in switching regulators, DC-DC converters, motor drivers, and general-purpose switching circuits.
It employs an enhancement mode channel with low on-resistance of 28 mΩ to minimize conduction losses, enhancing system performance and thermal efficiency. A maximum gate-source voltage rating of ±20 V ensures reliable operation in a variety of circuit designs.
The TO-220 through-hole package includes 3 pins, which supports ease of mounting to PCBs and facilitates heat dissipation through heat sinks for higher power applications. The device operates efficiently over a large temperature range from -55°C to 175°C, enabling use in challenging industrial and automotive environments.
Maximum continuous drain current of 38 A. Rated for maximum drain-source voltage of 60 V. Low on-resistance (Rds) of 28 milliohms. Enhancement mode N-channel operation. Maximum gate-source voltage of ±20 V. Forward voltage drop of 1.5 V.
Typical gate charge of 32 nC for fast switching. Power dissipation up to 80 W. Package type: TO-220, through-hole mount. Operating temperature range: -55°C to 175°C. Compact size: 10.4 mm length, 4.6 mm width, 9.15 mm height.
This MOSFET is commonly employed in industrial electronics, power supplies, automotive circuits, manufacturing equipment, and HVAC systems where reliable and efficient switching is critical.
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Frequently Asked Questions
The maximum continuous drain current for this model is 38 A.
It has a maximum drain-source voltage rating of 60 V, making it suitable for medium voltage circuits.
The on-resistance (Rds) is 28 mΩ, which helps reduce power losses during conduction.
The maximum gate-source voltage is rated at ±20 V, ensuring reliable operation in various circuit designs.
The typical gate charge is 32 nC, which facilitates fast switching speeds.
The operating temperature range is from -55°C to 175°C, allowing use in harsh environments.
This model comes in a TO-220 package type, which supports through-hole mounting.
The dimensions are 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height.
The forward voltage drop is 1.5 V, ensuring efficient transistor operation.
It can handle a maximum power dissipation of 80 W.
This model is commonly employed in industrial electronics, power supplies, automotive circuits, and HVAC systems.
This device features an enhancement mode N-channel configuration.
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