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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 9A 400V Enhancement 3-Pin TO-220 STP11NK40Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP11NK40Z |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 400V |
| Maximum Drain Source Resistance Rds | 550mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 32nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Offers an enhancement mode channel with low 550 mOhm maximum drain-source resistance.
- Features a typical gate charge of 32 nC at Vgs ensuring efficient switching performance.
- Supports a forward voltage of 1.6V for effective conduction.
- Maximum power dissipation is 110W, suitable for various industrial applications.
- Operates reliably between -55°C to 150°C ambient temperatures.
- Mounts via through-hole method with 3 pins for standard circuit integration.
- Compact dimensions of 10.4mm length, 4.6mm width, and 9.15mm height.
- Comes without automotive certification, designed for general electronic component use.
Product Description
STMicroelectronics STP11NK40Z MDmesh SuperMESH N-Channel MOSFET is a discrete semiconductor power switching device designed to handle continuous drain currents up to 9 amperes with a maximum drain-source voltage of 400 volts. Packaged in a robust TO-220 case and equipped with three pins, this enhancement mode MOSFET provides low on-resistance and efficient gate charge characteristics.
Its maximum drain-source resistance of 550 milliohms offers reduced power losses, while a typical gate charge of 32 nanocoulombs at gate-source voltage ensures fast switching and improved energy efficiency. The device's forward voltage of 1.6 volts supports stable conduction under load.
Designed for high power dissipation up to 110 watts, it suits applications in industrial power management, motor drivers, and power supplies. The MOSFET reliably operates under a broad temperature range from -55°C to 150°C, making it adaptable for demanding environments.
The package utilizes a through-hole mounting type to ensure dependable mechanical stability in circuit boards. Physical dimensions measure 10.4 mm in length, 4.6 mm width, and 9.15 mm height, providing a compact footprint suitable for PCB layouts.
Enhancement mode N-channel MOSFET technology. Maximum continuous drain current of 9 amperes. Maximum drain-source voltage of 400 volts. Low on-resistance of 550 milliohms reduces conduction losses. Typical gate charge of 32 nanocoulombs supports high-frequency switching.
Forward voltage of 1.6 volts ensures efficient conduction. Wide operating temperature range from -55°C to 150°C. Maximum power dissipation capability of 110 watts. Standard TO-220 package with three pins and through-hole mounting.
Compact size fits a variety of electronic designs.
This MOSFET is ideal for power management in electronic components and discrete semiconductor applications in industrial and laboratory settings, enhancing energy efficiency and performance stability.
Explore STMicroelectronics and other MOSFETs in the Electronics & Electricals > Discrete Semiconductors > MOSFET category on EnvMart for comprehensive selection and technical support.
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Frequently Asked Questions
The maximum continuous drain current for the STMicroelectronics STP11NK40Z is 9 amperes.
This model can handle a maximum drain-source voltage of 400 volts.
The typical gate charge at gate-source voltage (Vgs) is 32 nanocoulombs.
The maximum power dissipation capability is 110 watts.
The dimensions of this MOSFET are 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height.
The maximum drain-source resistance is 550 milliohms.
It operates reliably between -55°C and 150°C.
This MOSFET uses a through-hole mounting type with three pins.
No, this model does not come with automotive certification; it is designed for general electronic component use.
The forward voltage is 1.6 volts, which supports stable conduction under load.
This MOSFET belongs to the MDmesh and SuperMESH series.
It uses an enhancement mode N-channel configuration.
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