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Semikron Danfoss N-Channel IGBT Module 300 A 1200 V 7-Pin SEMITRANS Panel SKM300GB125D
Specifications
| Country of Origin | India |
|---|---|
| Brand | Semikron Danfoss |
| Height | 30.5mm |
| Length | 106.4mm |
| Model | SKM300GB125D |
| Width | 61.4mm |
| Mount Type | Panel |
| Series | SKM300GB125D |
| Maximum Operating Temperature | 150°C |
| Package Type | SEMITRANS |
| Minimum Operating Temperature | -40°C |
| Pin Count | 7 |
| Maximum Continuous Collector Current Ic | 300A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.85V |
| Channel Type | N |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Number of Transistors | 2 |
Key Features
- Dual IGBT transistors provide efficient power switching.
- Panel mounting design ensures robust installation.
- Operates reliably from -40°C up to 150°C.
- Features 7-pin configuration with 20 V maximum gate emitter voltage.
- Insulated copper baseplate enhances thermal management.
- Suitable for applications requiring switching frequencies up to 12 kHz.
- Compact dimensions of 106.4 mm length, 61.4 mm width, and 30.5 mm height.
- Designed for power switching in AC inverter motor drives and uninterruptible power supplies.
Product Description
Semikron Danfoss SKM300GB125D is an N-Channel Insulated Gate Bipolar Transistor (IGBT) module designed for high performance power switching applications. Rated at 300 amperes of maximum continuous collector current and 1200 volts maximum collector emitter voltage, this module features a dual IGBT construction in a compact SEMITRANS panel mount package.
The module incorporates a 7-pin configuration optimized for efficient gate control, with a maximum gate emitter voltage of 20 volts ensuring reliable switching operation. With an operating temperature range from -40°C minimum to 150°C maximum, it is engineered for durability in demanding industrial environments.
Its compact physical dimensions of 106.4 mm length, 61.4 mm width, and 30.5 mm height, along with an insulated copper baseplate utilizing Direct Bonded Copper technology, offer excellent thermal efficiency and mechanical stability. The SEMITRANS package supports switching frequencies up to 12 kHz, making it suitable for AC inverter motor drives and uninterruptible power supply systems.
This dual transistor module delivers high efficiency and fast switching combined with the robust performance necessary for industrial, manufacturing, HVAC, and power management applications. Its rugged panel mount design facilitates integration into control panels and power electronic assemblies.
Dual IGBT Transistor Configuration. Maximum Collector Current of 300 A. Maximum Collector Emitter Voltage of 1200 V. Panel Mount Type SEMITRANS Package. Operating Temperature Range: -40°C to 150°C. 7-Pin Configuration with 20 V Gate Emitter Voltage.
Compact Dimensions for Space-Saving Installation. Application in AC Inverter Motor Drives and UPS Systems. Explore more electronic semiconductor solutions and power modules in the EnvMart catalog to suit your industrial and commercial needs.
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Frequently Asked Questions
The maximum continuous collector current for this module is 300 A.
This IGBT module has a maximum collector emitter voltage rating of 1200 V.
The operating temperature range of this model is from -40°C to 150°C.
This module contains two N-channel transistors.
It features a 7-pin configuration optimized for efficient gate control.
The maximum gate emitter voltage for this module is 20 V.
The dimensions of this model are 106.4 mm in length, 61.4 mm in width, and 30.5 mm in height.
This module comes in a SEMITRANS package type.
It is suitable for applications such as AC inverter motor drives and uninterruptible power supplies.
The maximum collector emitter saturation voltage for this model is 3.85 V.
This model supports panel mounting for robust installation.
The country of origin for this IGBT module is India.
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