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Semikron Danfoss N-Channel IGBT Module 260 A 1200 V 7-Pin SEMITRANS Panel SKM200GB126D
Specifications
| Country of Origin | India |
|---|---|
| Brand | Semikron Danfoss |
| Height | 30mm |
| Length | 106.4mm |
| Model | SKM200GB126D |
| Width | 61.4mm |
| Mount Type | Panel |
| Series | SKM200GB126D |
| Maximum Operating Temperature | 150°C |
| Package Type | SEMITRANS |
| Minimum Operating Temperature | -40°C |
| Pin Count | 7 |
| Maximum Continuous Collector Current Ic | 260A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V |
| Channel Type | N |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Number of Transistors | 2 |
| Infineon, N-Channel IGBT Module, 370 A 1200 V, 3-Pin 62 mm Module, ClampBrand | Infineon |
Key Features
- Features two series-connected IGBT transistors in a compact SEMITRANS panel package.
- Suitable for switching frequencies up to 12 kHz enabling efficient AC inverter motor drives.
- Insulated copper baseplate built with Direct Bonded Copper technology for reliable heat dissipation.
- Operates reliably over a wide temperature range from -40°C to a maximum of 150°C.
- Equipped with 7 pins for seamless panel mounting and connection.
- Maximum gate emitter voltage rating of 20 V ensures safe transistor control.
- Designed for high efficiency and fast switching in power electronic circuits.
- Compact dimensions of 106.4 mm length, 61.4 mm width, and 30 mm height save space in installations.
Product Description
Semikron Danfoss SKM200GB126D is a robust and efficient N-Channel Insulated Gate Bipolar Transistor (IGBT) module designed for industrial power switching applications. This dual IGBT module contains two series-connected transistors, featuring a compact SEMITRANS package with 7 pins for panel mounting. It supports a maximum continuous collector current of 260 A and can withstand up to 1200 V collector emitter voltage.
The module is engineered with an insulated copper baseplate made using advanced Direct Bonded Copper technology, enhancing thermal management and durability. It operates effectively within a broad temperature range from -40°C to 150°C, accommodating diverse industrial environments and demanding conditions.
Its switching capability of up to 12 kHz makes it suitable for high-performance AC inverter motor drives, Uninterruptible Power Supplies (UPS), and other power electronics. The maximum gate emitter voltage rating of 20 V offers reliable control over transistor conduction.
Measuring 106.4 mm in length, 61.4 mm in width, and 30 mm in height, this module fits compactly within control panels and systems requiring space-efficient solutions. The product is intended for new installations and does not conform to automotive standards.
Two series-connected IGBT transistors for half-bridge configuration. Compact SEMITRANS package optimizes space and mounting options. Direct Bonded Copper baseplate improves heat dissipation. Wide operating temperature ensures reliable performance.
Suitable for motor drives, UPS, and power switching circuits. 7-pin configuration for panel mounting integration. High efficiency and fast switching characteristics. Durable design with rated maximum saturation voltage of 2.1 V.
Stable operation at maximum collector current of 260 A. Product condition is new and ready for industrial deployment. For advanced power semiconductor solutions in electronics and industrial automation, explore the wide range of IGBT Modules available at EnvMart.
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Frequently Asked Questions
The maximum continuous collector current for this IGBT module is 260 A.
This model can withstand a maximum collector emitter voltage of 1200 V.
It operates reliably over a wide temperature range from -40°C to a maximum of 150°C.
The module is equipped with 7 pins for seamless panel mounting and connection.
The package type of this IGBT module is SEMITRANS.
The maximum gate emitter voltage rating for this model is 20 V.
This model measures 106.4 mm in length, 61.4 mm in width, and 30 mm in height.
It is suitable for applications such as AC inverter motor drives and Uninterruptible Power Supplies (UPS).
The maximum collector emitter saturation voltage for this module is 2.1 V.
This model contains two series-connected N-channel IGBT transistors.
The module features an insulated copper baseplate built with Direct Bonded Copper technology for reliable heat dissipation.
The country of origin for this IGBT module is India.
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