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Nexperia N-Channel MOSFET 10.3 A 30 V 4-Pin LFPAK88 Surface Mount BUK7S2R0-40HJ

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Nexperia N-Channel MOSFET 10.3 A 30 V 4-Pin LFPAK88 Surface Mount BUK7S2R0-40HJ

Name: Nexperia N-Channel MOSFET 10.3 A 30 V 4-Pin LFPAK88 Surface Mount BUK7S2R0-40HJ
Brand: Nexperia
SKU: 322903
Price: 2.47 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Model	BUK7S2R0-40HJ
Mount Type	Surface
Maximum Operating Temperature	175°C
Package Type	LFPAK88
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	N
Maximum Continuous Drain Current Id	10.3A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	13.6mΩ
Maximum Power Dissipation Pd	81W
Maximum Gate Source Voltage Vgs	20V

Key Features

Features latest Trench 9 low ohmic super junction technology for efficient performance.
Automotive qualified and exceeds AEC-Q101 standards for high reliability.
Operates from -55 °C to +175 °C suitable for demanding environments.
Copper-clip LFPAK88 package provides excellent thermal efficiency.
Low drain-source resistance (13.6mΩ) ensures high current capability.
Designed for surface mount assembly enabling compact PCB layouts.
Supports 12 V automotive systems and 48 V DC/DC converter secondary side.
Ideal for high power switching, motor control, lamp, and solenoid applications.

Product Description

Nexperia BUK7S2R0-40HJ is an automotive qualified N-channel MOSFET featuring a maximum continuous drain current of 10.3 A and a maximum drain-source voltage of 30 V. It is designed with state-of-the-art Trench 9 low ohmic super junction technology and housed in a highly efficient copper-clip LFPAK88 surface mount package, enabling excellent power dissipation of up to 81 W. This MOSFET operates reliably across a wide temperature range from -55 °C to 175 °C, suitable for thermally demanding automotive and industrial applications.

The compact 4-pin LFPAK88 packaging includes a copper clip for superior thermal conduction, resulting in low thermal resistance and efficient heat dissipation. Low drain-source resistance (Rds(on)) of 13.6 mΩ ensures reduced conduction losses, supporting higher current demands and improved system efficiency. Its low source inductance and excellent current spreading contribute to stable and robust electrical performance.

This product exceeds AEC-Q101 automotive standards, delivering high reliability in safety-critical environments. It is suitable for use in 12 V automotive electrical systems, 48 V DC/DC converters (secondary side), and is ideal for controlling high power motors, lamps, solenoids, and for reverse polarity protection. The MOSFET’s easy solder wetting facilitates reliable mechanical solder joints and straightforward visual AOI inspection, minimizing production complexity.

Trench 9 super junction technology for low Rds(on) and high efficiency. Automotive grade and AEC-Q101 qualified for critical applications. Wide operating temperature range (-55 °C to 175 °C). Copper-clip LFPAK88 surface mount package for improved thermal management.

High power dissipation capability (81 W). Low thermal resistance enhances device reliability and longevity. Designed for 12 V and 48 V automotive electrical systems. Suited for motor control, high power lamps, solenoids, and power switching.

Enables robust and efficient electronic circuit designs. Compatible with automated visual soldering inspection methods.

Discover more in the MOSFET category in Electronics & Electricals at EnvMart for a wide range of power semiconductor devices engineered for superior industrial and automotive performance.