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Nexperia N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK88 Surface Mount Package BUK7S0R5-40HJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | BUK7S0R5-40HJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK88 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- This MOSFET utilizes Trench 9 low ohmic super junction technology for enhanced efficiency and low resistance.
- The copper-clip LFPAK88 package ensures excellent thermal conductivity with low thermal resistance.
- Supports operation in thermally demanding environments from -55°C to +175°C.
- Features a maximum power dissipation of 81 W and low drain-source resistance (13.6 mΩ) for high efficiency.
- Designed for automotive and industrial systems including 12 V automotive and 48 V DC/DC converter applications.
- The device allows reverse polarity protection and possesses ultra-high power switching capabilities.
- Easy solder wetting enables a reliable mechanical solder joint and visual solder inspection.
- Fits applications with low source inductance and excellent current spreading characteristics.
Product Description
Nexperia BUK7S0R5-40HJ is a high-performance N-channel MOSFET designed for power switching with a maximum continuous drain current of 10.3 A and a maximum drain-source voltage of 30 V in a compact 4-pin LFPAK88 surface mount package.
It incorporates the latest Trench 9 low ohmic super junction technology delivering exceptionally low on-resistance (13.6 mΩ) and high efficiency. The copper-clip LFPAK88 package enhances thermal management with low thermal resistance, ideal for thermally demanding industrial and automotive applications ranging from -55°C to 175°C.
This MOSFET supports up to 81 W of power dissipation, enabling use in higher power automotive systems such as 12 V platforms and 48 V DC/DC converters, as well as industrial equipment requiring robust reverse polarity protection and reliable switching performance.
Additional features include low source inductance, excellent current spreading for uniform dissipation, a maximum gate-source voltage of 20 V, and compatibility with visual (AOI) soldering inspection without the need for expensive X-ray equipment. These qualities make it highly suitable for use in high-power motors, lamps, solenoids, and other automotive and industrial control circuits.
This MOSFET utilizes Trench 9 low ohmic super junction technology for enhanced efficiency and low resistance. The copper-clip LFPAK88 package ensures excellent thermal conductivity with low thermal resistance. Supports operation in thermally demanding environments from -55°C to +175°C.
Features a maximum power dissipation of 81 W and low drain-source resistance (13.6 mΩ) for high efficiency. Designed for automotive and industrial systems including 12 V automotive and 48 V DC/DC converter applications. The device allows reverse polarity protection and possesses ultra-high power switching capabilities.
Easy solder wetting enables a reliable mechanical solder joint and visual solder inspection. Fits applications with low source inductance and excellent current spreading characteristics. Maximum gate-source voltage rating of 20 V supports robust control.
This product is ideal for industrial, automotive, manufacturing, and power management applications where performance and reliability are critical. Explore the wide range of semiconductor devices available on EnvMart to meet your electronic component requirements.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 10.3 A.
This model can handle a maximum drain-source voltage of 30 V.
The maximum power dissipation rating for this MOSFET is 81 W.
The operating temperature range for this device is from -55°C to 175°C.
The drain-source resistance for this MOSFET is 13.6 mΩ.
This MOSFET uses a 4-pin LFPAK88 surface mount package.
The maximum gate-source voltage for this model is 20 V.
This MOSFET is suitable for automotive systems, including 12 V automotive and 48 V DC/DC converter applications, as well as industrial equipment.
The copper-clip LFPAK88 package ensures excellent thermal conductivity with low thermal resistance, enhancing thermal management.
This model features easy solder wetting, which enables a reliable mechanical solder joint and visual solder inspection.
The channel type for this device is N-channel, and it has a pin count of 4.
The BUK7S0R5-40HJ is manufactured in India.
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