Infineon IGBT Module Dual Channel Gate Driver 2 A 36-Pin SOIC-36 Package 20V 2ED020I12FAXUMA2

Featuring a rail-to-rail 2 A output current capability, this device is packaged in a SOIC-36 form factor with functional galvanic isolation, making it suitable for driving IGBTs and SiC MOSFETs at voltages of 20 V.

This gate driver effectively provides two fully independent driver outputs with typical 2 A source and sink currents, facilitating reliable switching of power semiconductors in demanding industrial and commercial environments. Its minimum and maximum supply voltage of 20 V ensures stable operation, while the active Miller clamp function reduces switching losses and enhances efficiency.

Engineered to withstand harsh operating conditions, the 2ED020I12FAXUMA2 supports an extended temperature range from -40°C to 150°C, which makes it robust for power management tasks in automotive, manufacturing, HVAC, and industrial automation systems.

The device complies with DIN EN 60747-5-2 electrical safety and performance standards, assuring quality and reliability in use. With a fast fall time of 350 nanoseconds, it offers efficient switching performance tailored to modern power electronics.

This Infineon IGBT Module is indispensable for applications requiring galvanically isolated dual channel gates with high drive current capability, enhancing production efficiency when integrated into power converters, motor drives, and industrial controls.

The module supports dual independent driver outputs with 2 A source and sink currents. Functional galvanic isolation enhances safety and performance. Operating voltage fixed at 20 V for stable power delivery. Wide operating temperature range from -40°C to 150°C suits industrial requirements.

Active Miller clamp reduces switching losses. Fast fall time of 350 ns enables efficient switching. Meets DIN EN 60747-5-2 compliance standards. Explore the Infineon range of semiconductor gate drivers and power management ICs on EnvMart for advanced power electronics solutions.