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Infineon N-Channel IGBT Module 200 A 1200 V 46-Pin Chassis Mount FP200R12N3T7BPSA1

Category IGBT Module Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 20.5mm
Length 122mm
Model FP200R12N3T7BPSA1
Width 62mm
Mount Type Chassis
Series FP200R12N3T7
Maximum Operating Temperature 175°C
Package Type Module
Minimum Operating Temperature -40°C
Pin Count 46
Maximum Continuous Collector Current Ic 200A
Maximum Collector Emitter Voltage Vceo 1200V
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V
Channel Type N
Maximum Power Dissipation Pd 20mW
Maximum Gate Emitter Voltage VGEO 20 V
Number of Transistors 7

Key Features

  • The module features a chassis mounting type for easy installation.
  • Includes 7 transistors integrated in a 46-pin package.
  • Supports maximum gate emitter voltage of 20 V for control.
  • Operates reliably within -40°C to 175°C temperature range.
  • Compact dimensions of 122 mm length, 62 mm width, and 20.5 mm height.
  • Maximum collector emitter saturation voltage is 1.55 V ensuring efficient switching.
  • Comes with copper base plate to optimize heat dissipation.
  • Suitable for industrial and automotive inverter, motor drives, and servo drives.

Product Description

Infineon FP200R12N3T7BPSA1 is a high-performance N-Channel IGBT power module engineered for demanding industrial applications. It supports a maximum continuous collector current of 200 A and can withstand collector emitter voltages up to 1200 V, making it ideal for high power switching tasks.

The module is built with 7 transistors integrated within a 46-pin package designed for chassis mounting. Its robust construction includes a copper base plate that facilitates optimized heat spread, ensuring high power density and reliable operation under thermal stress.

This IGBT Module supports a maximum gate emitter voltage of 20 V and features a low collector emitter saturation voltage of 1.55 V to enhance switching efficiency. It operates across a wide temperature range from -40°C to 175°C, enabling usage in harsh industrial environments.

With compact physical dimensions of 122 mm length, 62 mm width, and 20.5 mm height, the FP200R12N3T7BPSA1 is space-efficient and well suited for integration into power systems and motor control units.

The module is RoHS compliant, although no specific standards or automotive certifications are declared. Its applications include auxiliary inverters, motor drives, and servo drives in industrial, automation, and power electronics sectors.

The module features a chassis mounting type for easy installation. Includes 7 transistors integrated in a 46-pin package. Supports maximum gate emitter voltage of 20 V for control. Operates reliably within -40°C to 175°C temperature range.

Compact dimensions of 122 mm length, 62 mm width, and 20.5 mm height. Maximum collector emitter saturation voltage is 1.55 V ensuring efficient switching. Comes with copper base plate to optimize heat dissipation. Suitable for industrial inverter, motor drives, and servo drives.

Explore more power modules at EnvMart for your power management and industrial automation needs.

Infineon N-Channel IGBT Module 200 A 1200 V 46-Pin Chassis Mount FP200R12N3T7BPSA1
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Frequently Asked Questions

The maximum continuous collector current of this model is 200 A.

It can withstand a maximum collector emitter voltage of 1200 V.

The dimensions are 122 mm in length, 62 mm in width, and 20.5 mm in height.

It operates reliably within a temperature range of -40°C to 175°C.

This model includes 7 transistors integrated within its package.

The maximum gate emitter voltage supported is 20 V.

It features a chassis mounting type for easy installation.

The maximum collector emitter saturation voltage is 1.55 V.

It comes with a copper base plate to optimize heat dissipation.

It is suitable for industrial inverters, motor drives, and servo drives.

The package type is a module, specifically designed for chassis mounting.

The country of origin for this module is India.

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