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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | FF450R33T3E3BPSA1 |
| Mount Type | Clamp |
| Series | XHP3 module |
| Maximum Operating Temperature | 150°C |
| Package Type | XHP |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 450A |
| Maximum Collector Emitter Voltage Vceo | 3300V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 1mW |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Infineon FF450R33T3E3BPSA1 is a high-performance N-Channel IGBT module rated at 450 A collector current and 3300 V collector emitter voltage. It comes in a 3-pin XHP package with a clamp mounting type designed to provide durable and reliable operation under demanding industrial conditions.
This module excels with its low Collector Emitter Saturation Voltage of 3 V, which contributes to low conduction losses and improved efficiency. It also features a maximum power dissipation of 1 milliwatt, ensuring thermal robustness for extended service life.
Operating temperature range spans from -40°C to 150°C, making it suitable for harsh environments and heavy-duty applications in power electronics, automotive electronics, and industrial motor drives.
The IGBT's gate emitter voltage maximum of 20 V supports precision switching control and stable conduction characteristics. Its clamp mounting ensures secure installation, reducing mechanical stresses and enhancing system reliability.
This Infineon IGBT module is engineered for applications including inverters, converters, and power supplies, where efficient and high-current switching is required. Its XHP3 series design reflects advanced semiconductor technology providing both high electrical performance and rugged mechanical construction.
This IGBT module features a clamp mount and 3-pin XHP package type. It provides maximum power dissipation of 1 mW with high DC stability. Designed for robust operation with a maximum operating temperature up to 150°C. Low Collector Emitter Saturation Voltage of 3 V ensures efficient performance.
Supports gate emitter voltage up to 20 V, enabling reliable control. Suitable for industrial and power electronics applications requiring high current and voltage. Package includes a durable clamp for secure mounting in various electrical assemblies.
Explore our full range of IGBT Modules and semiconductor solutions at EnvMart to meet your power management and electronic component needs with trusted quality from Infineon.
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