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Infineon N-Channel IGBT Module 35 A 1200 V 31-Pin AG-EASY2B Through Hole FP35R12W2T7B11BOMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.4mm |
| Length | 56.7mm |
| Model | FP35R12W2T7B11BOMA1 |
| Width | 48mm |
| Mount Type | Through Hole |
| Series | FP35R12W2T7-B11 |
| Maximum Operating Temperature | 175°C |
| Package Type | AG-EASY2B |
| Minimum Operating Temperature | -40°C |
| Pin Count | 31 |
| Maximum Continuous Collector Current Ic | 35A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 20mW |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Number of Transistors | 7 |
Key Features
- This module includes 7 transistors with TRENCHSTOP™ IGBT7 technology for low collector emitter saturation voltage.
- Designed for three-phase input rectifier applications with emitter controlled 7 diode and NTC functionality.
- Features PressFIT contact technology ensuring reliable through hole mounting.
- Compact design with low thermal resistance Al2O3 substrate allows high power density operation.
- Supports overload operation up to 175°C with insulation voltage of 2.5 kV AC for 1 minute.
- Robust build with operating temperature range from -40°C to 175°C.
- The module dimensions are 56.7 mm length, 48 mm width, and 16.4 mm height.
Product Description
Infineon FP35R12W2T7B11BOMA1 is a high performance N-Channel IGBT module designed for power semiconductor applications requiring efficient switching and high reliability. This Power Integrated Module (PIM) utilizes advanced TRENCHSTOP™ IGBT7 technology, providing a low collector emitter saturation voltage of 1.6 V, which enhances energy efficiency in demanding industrial and commercial environments.
The module has a maximum continuous collector current rating of 35 A and supports a maximum collector emitter voltage of 1200 V, making it suitable for medium to high voltage power switching tasks. It incorporates 7 transistors integrated into an AG-EASY2B package, designed with through hole press-fit mounting for ease of installation and strong mechanical stability.
Engineered for robustness, it can handle overload operation at elevated temperatures up to 175°C. The device also features an emitter controlled 7 diode and integrated NTC for improved thermal management and safety. The module features an Al2O3 substrate offering low thermal resistance to maintain optimal temperature performance during high power operation.
With compact mechanical dimensions of 56.7 mm length, 48 mm width, and 16.4 mm height, the FP35R12W2T7B11BOMA1 module is well-suited for applications in industrial automation, motor drives, renewable energy inverters, and power conversion systems requiring reliable and efficient semiconductor components.
This IGBT Module provides low Vce saturation for efficient switching. PressFIT contact technology ensures secure and reliable mounting. Designed for three-phase input rectifier power modules. Robust operating temperature range and overload capabilities.
Compact design with low thermal resistance substrate. Suitable for industrial, laboratory, and manufacturing power electronics. Integrates 7 transistors and advanced power semiconductor technology. Discover more power semiconductor modules like this in the Infineon product range on EnvMart, your trusted industrial components marketplace.
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Frequently Asked Questions
The maximum continuous collector current rating of this module is 35 A.
This IGBT module supports a maximum collector emitter voltage of 1200 V.
The operating temperature range for this model is from -40°C to 175°C.
The dimensions of this module are 56.7 mm in length, 48 mm in width, and 16.4 mm in height.
This module integrates 7 transistors.
It utilizes a through hole mounting type with PressFIT contact technology.
The maximum collector emitter saturation voltage is 1.6 V.
This IGBT module is packaged in an AG-EASY2B type.
The maximum gate emitter voltage for this model is 20 V.
It is suitable for applications in industrial automation, motor drives, renewable energy inverters, and power conversion systems.
This module utilizes advanced TRENCHSTOP™ IGBT7 technology for low collector emitter saturation voltage.
The country of origin for this module is India.
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