Nexperia N-Channel MOSFET 5.5 A 55 V Enhancement Mode 4-Pin SOT-223 BUK98150-55A/CUF

Nexperia BUK98150-55A/CUF is a logic level N-channel enhancement mode Field-Effect Transistor (FET) designed using advanced TrenchMOS technology. It is housed in a compact 4-pin SOT-223 plastic package suitable for surface-mount applications.

This MOSFET features a maximum continuous drain current of 5.5 A and a drain-source voltage rating of 55 V, making it suitable for various power switching and control tasks in electronics systems.

Its low conduction losses due to the low on-state resistance of 161 mΩ ensure higher efficiency and thermal performance. The device supports a maximum power dissipation of 8 W and operates reliably within a temperature range from -55°C to 150°C, meeting the automotive industry standard AEC-Q101 for quality and reliability.

The MOSFET’s typical gate charge of 5.3 nC at Vgs enables quick switching, and the gate-source voltage maximum rating is 15 V to ensure safe and effective gate control. Physical dimensions are compact, with a height of 300 µm, length 6.7 mm, and width 3.7 mm, supporting high-density circuit board layouts.

Uses TrenchMOS technology enabling low on-state resistance. Automotive standard AEC-Q101 compliance ensures product reliability. Surface mount design with 4-pin SOT-223 package. Suitable for power management and switching applications.

Wide operating temperature range from -55°C to 150°C. Max continuous drain current of 5.5 A and drain-source voltage of 55 V. Maximum power dissipation rating of 8 W. Typical gate charge of 5.3 nC for efficient switching performance.

This MOSFET is ideal for use in automotive electronics, power supply circuits, and general industrial electronic applications. Browse the Electronics & Electricals category on EnvMart for more high-quality semiconductor components and MOSFETs from leading brands like Nexperia.