STMicroelectronics MDmesh N-Channel MOSFET, 138 A, 650 V Enhancement, 3-Pin Max247 STY145N65M5

STMicroelectronics STY145N65M5 is a MDmesh N-Channel MOSFET designed for high-performance switching applications requiring a continuous drain current up to 138 A and a drain-source voltage of 650 V. Packaged in a 3-pin Max247 through-hole configuration, it is optimized for industrial and electronic applications where robustness and efficiency are critical.

This enhancement-mode MOSFET features a low maximum drain-source resistance of 15 mΩ, which contributes to reduced conduction losses and improved system efficiency. The typical gate charge of 414 nC allows for rapid switching, making this device suitable for power conversion, motor control, and power supply designs.

Physical dimensions of 15.9 mm length, 5.3 mm width, and 20.3 mm height allow for convenient PCB mounting and integration into existing hardware platforms. It supports a maximum gate-source voltage range of -25 to +25 V, ensuring reliable gate operation. The MOSFET can dissipate up to 625 W, making it fit for demanding thermal environments up to 150°C operating temperature.

Common industrial and electronic uses include power management in motor drives, power supplies, inverters, and other high power applications where efficient switching performance is required. This device complies with standard industry practices but has no specific approvals or automotive standards certification.

This device provides a maximum drain current of 138 A with a drain-source voltage rating of 650 V. The package type is Max247 with a 3-pin through-hole mount, facilitating ease of assembly. Gate charge and voltage ratings allow for responsive and safe MOSFET operation.

Power dissipation capability supports heavy load conditions. Compact and durable physical form factor suitable for industrial PCB layouts. Explore more STMicroelectronics semiconductor products in the MOSFET category on EnvMart for reliable power electronics solutions.