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STMicroelectronics STripFET Type P-Channel MOSFET 10 A 40 V Enhancement 8-Pin SOIC STS10P4LLF6
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 1.5mm |
| Length | 5mm |
| Model | STS10P4LLF6 |
| Width | 4mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 20mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.7W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
Key Features
- Features ultra-low gate charge for efficient switching performance.
- 8-pin SOIC surface-mount package for compact PCB designs.
- Maximum power dissipation of 2.7 W supports robust operation.
- Wide operating temperature range from -55°C to 150°C ensures reliability.
- Low on-resistance of 20 mΩ minimises power loss during conduction.
- Typical gate charge is 34 nC at Vgs, optimizing fast switching.
- Forward voltage of -1.1 V supports efficient MOSFET operation.
- Maximum gate-source voltage of ±20 V guarantees device protection.
Product Description
STMicroelectronics STS10P4LLF6 is a P-Channel STripFET™ power MOSFET designed for efficient switching and power management in electronic circuits. It supports a maximum continuous drain current of 10 A and a drain-source voltage rating of 40 V. Housed in a compact 8-pin SOIC surface-mount package, this MOSFET provides excellent electrical performance with ultra-low gate charge and low on-resistance of 20 mΩ, ideal for use in various industrial, automotive, and consumer electronics applications.
The device features a maximum power dissipation of 2.7 W and is capable of reliable operation over a wide temperature range from -55°C up to 150°C. Its typical gate charge of 34 nC at the specified gate-source voltage ensures fast switching speeds while minimizing power loss, making it well-suited for high-efficiency power conversion circuits.
With a forward voltage of -1.1 V and maximum gate-source voltage tolerance of ±20 V, the STS10P4LLF6 MOSFET provides robust protection against voltage spikes. Its physical dimensions (length 5 mm, width 4 mm, height 1.5 mm) enable use in space-constrained PCB layouts.
Ultra-low gate charge for enhanced switching efficiency. Compact 8-pin SOIC surface-mount package. High power dissipation rating of 2.7 W for stable operation. Wide temperature range ensures durability in harsh environments.
Low on-resistance reduces conduction losses. Typical gate charge 34 nC at Vgs for high-speed switching. Forward voltage of -1.1 V for improved device performance. Maximum gate-source voltage ±20 V for device protection. Small form factor dimensions suitable for dense electronics assembly.
Designed as an enhancement mode P-Channel MOSFET suitable for power management tasks.
This STMicroelectronics MOSFET is widely used across industrial electronics, power supplies, automotive systems, and consumer electronic devices requiring efficient, compact, and reliable switching components. Users can leverage this component for innovative circuit design, ensuring optimized power control and thermal performance.
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Frequently Asked Questions
The maximum continuous drain current for the STMicroelectronics STripFET Type P-Channel MOSFET is 10 A.
This model has a maximum drain-source voltage rating of 40 V.
The on-resistance of this MOSFET is 20 mΩ, which helps to minimize power loss during conduction.
The typical gate charge at the specified gate-source voltage (Vgs) is 34 nC.
The maximum power dissipation for this MOSFET is 2.7 W, supporting robust operation.
It operates over a wide temperature range from -55°C to 150°C, ensuring reliability in various environments.
The STS10P4LLF6 is housed in an 8-pin SOIC surface-mount package, suitable for compact PCB designs.
The forward voltage for this model is -1.1 V, which supports efficient operation.
This MOSFET has a maximum gate-source voltage tolerance of ±20 V, providing protection against voltage spikes.
The physical dimensions are length 5 mm, width 4 mm, and height 1.5 mm.
This model features a P-Channel type channel, designed for enhancement mode operation.
It is suitable for use in industrial electronics, power supplies, automotive systems, and consumer electronic devices requiring efficient switching.
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