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STMicroelectronics STripFET N-Channel MOSFET 30 A 200 V Enhancement 3-Pin TO-263 STB30NF20
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STB30NF20 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 75mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- This MOSFET features a maximum drain-source resistance of 75 milliohms ensuring efficient conduction.
- It provides a maximum power dissipation of 125 watts for robust thermal handling.
- The typical gate charge at Vgs is 38 nanocoulombs, allowing efficient switching.
- Operational temperature ranges from -55°C to a maximum of 150°C, suitable for demanding environments.
- Its compact TO-263 3-pin surface mount package measures 10.4 mm length, 9.35 mm width, and 4.6 mm height.
- The device supports a maximum gate-source voltage of -20 V to +20 V for reliable gate control.
- Forward voltage characteristic is rated at 1.5 volts.
Product Description
STMicroelectronics STB30NF20 is a high-performance N-Channel STripFET™ MOSFET designed for effective power switching applications.
This enhancement mode MOSFET supports a maximum continuous drain current of 30 amperes and a drain-source voltage of 200 volts, making it suitable for power management in electronic circuits.
The device is packaged in a 3-pin TO-263 surface mount format, providing easy PCB integration and excellent thermal dissipation with a power dissipation capability of 125 watts. Operating temperature ranges from -55°C to 150°C, allowing use in industrial and automotive electronics under a variety of conditions.
The device’s gate charge of 38 nC at Vgs and low drain-source resistance (75 milliohms) contribute to high efficiency and reduced power loss during switching. This MOSFET supports a wide maximum gate-source voltage from -20 V to +20 V, enhancing gate safety margins.
The forward voltage is rated at 1.5 volts, indicating low conduction losses. Compact dimensions of Height 4.6 mm, Length 10.4 mm, and Width 9.35 mm ensure space-efficient design. No specific approvals or automotive certifications apply; intended for standard industrial electronic applications.
STripFET series devices are optimized for applications in power supplies, motor controls, and switching circuits.
This MOSFET is ideal for use in industrial, automotive (non-certified), laboratory, and commercial electronic systems demanding reliable power switching with manageable heat dissipation.
Explore more electronic components and semiconductors in the MOSFET category on EnvMart for enhanced industrial and electronic design solutions.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 30 amperes.
It can handle a maximum drain-source voltage of 200 volts.
The typical gate charge at Vgs is 38 nanocoulombs.
The maximum power dissipation rating is 125 watts.
The TO-263 package measures 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height.
This MOSFET supports a maximum gate-source voltage of -20 V to +20 V.
The maximum drain-source resistance is rated at 75 milliohms.
The operational temperature range is from -55°C to a maximum of 150°C.
This model features an N-channel type.
It is suitable for power management in electronic circuits, including power supplies, motor controls, and switching circuits.
This MOSFET has a total of 3 pins.
The forward voltage characteristic is rated at 1.5 volts.
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