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onsemi Small Signal PNP Bipolar Transistor 600 mA, 40 V, TO-92 3-Pin 2N4403TFR

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 18.03mm
Length 5.2mm
Model 2N4403TFR
Width 4.19mm
Mount Type Through Hole
Series 2N4403
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -40V
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -40V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc -600mA
Transistor Configuration Single
Maximum Transition Frequency ft 200MHz

Key Features

  • This transistor features a maximum collector current of 600 mA.
  • It supports a maximum collector-emitter voltage of 40 V.
  • The device is housed in a TO-92 package suitable for through-hole mounting.
  • It exhibits a minimum DC current gain (hFE) of 30 for efficient amplification.
  • The maximum power dissipation is rated at 625 mW.
  • The operating temperature range spans from -55°C to 150°C ensuring robust performance.
  • The device has a maximum transition frequency of 200 MHz for high-speed switching.
  • It contains 3 pins configured in a single transistor setup with PNP polarity.

Product Description

onsemi 2N4403TFR is a small signal PNP bipolar junction transistor designed for a variety of electronic applications including amplification and switching purposes. It features a maximum DC collector current of 600 mA and can withstand collector-emitter voltages up to 40 V, making it suitable for low power electronic circuits in industrial, consumer electronics, and automation systems.

This transistor is packaged in a compact TO-92 form factor with three pins suitable for through-hole mounting, facilitating ease of integration into printed circuit boards (PCBs). The minimum DC current gain (hFE) of 30 enables effective signal amplification in analog circuits. Its maximum power dissipation rating of 625 mW allows reliable operation under moderate loads.

Operating temperatures range from -55°C to 150°C, providing resilience in harsh environmental conditions including industrial and automotive applications. Moreover, the device offers a maximum transition frequency of 200 MHz, making it appropriate for high-frequency switching tasks. The PNP transistor configuration makes it compatible with standard circuit designs requiring this polarity.

In terms of physical dimensions, it measures approximately 18.03 mm in height, 5.2 mm in length, and 4.19 mm in width. This compact footprint is ideal for space-constrained applications. The transistor complies with no specific automotive or industrial approvals but suits general electronic component roles.

This transistor features a maximum collector current of 600 mA. It supports a maximum collector-emitter voltage of 40 V. The device is housed in a TO-92 package suitable for through-hole mounting. It exhibits a minimum DC current gain (hFE) of 30 for efficient amplification.

The maximum power dissipation is rated at 625 mW. The operating temperature range spans from -55°C to 150°C ensuring robust performance. The device has a maximum transition frequency of 200 MHz for high-speed switching. It contains 3 pins configured in a single transistor setup with PNP polarity.

Dimensions approximately 18.03mm height, 5.2mm length, and 4.19mm width.

This transistor is suitable for use in industrial control systems, consumer electronics, power regulation circuits, and other laboratory or manufacturing applications. It forms a critical component in amplification and switching in small-signal electronics.

Discover more products in the Bipolar Transistors category at EnvMart to meet diverse electronics component needs.

onsemi Small Signal PNP Bipolar Transistor 600 mA, 40 V, TO-92 3-Pin 2N4403TFR
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Frequently Asked Questions

The maximum collector current for this transistor is 600 mA.

It supports a maximum collector-emitter voltage of 40 V.

This model measures approximately 18.03 mm in height, 5.2 mm in length, and 4.19 mm in width.

The operating temperature range spans from -55°C to 150°C.

It exhibits a minimum DC current gain (hFE) of 30.

The maximum power dissipation is rated at 625 mW.

The maximum transition frequency is 200 MHz.

This transistor has 3 pins configured in a single transistor setup.

It is housed in a TO-92 package suitable for through-hole mounting.

The transistor configuration is PNP, making it suitable for circuits requiring this polarity.

It is suitable for use in industrial control systems, consumer electronics, and power regulation circuits.

The maximum emitter-base voltage (VEBO) is rated at 5 V.

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