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onsemi Transistor NPN 30 A 450 V 3-Pin TO-247 MJW18020G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 41.85mm
Length 16.26mm
Model MJW18020G
Width 5.3mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 450V
Minimum DC Current Gain hFE 14
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 9V
Maximum Collector Base Voltage VCBO 1000V dc
Maximum Power Dissipation Pd 250W
Maximum DC Collector Current Idc 30A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Single transistor configuration suitable for high power applications.
  • Maximum power dissipation rating of 250 W for reliable performance.
  • Operating temperature range from -65°C to 150°C supports diverse environments.
  • Maximum transition frequency of 1 MHz for moderate switching speeds.
  • Through hole mount type enables easy PCB installation.
  • Pin count of 3 matched to standard TO-247 pinout.
  • Collector base voltage up to 1000 V for enhanced voltage tolerance.
  • Emitter base voltage ceiling at 9 V ensuring device safety.

Product Description

The onsemi MJW18020G is a high power NPN bipolar transistor designed for demanding applications requiring a maximum collector current of 30 A and a collector-emitter voltage rating of 450 V. Packaged in a robust 3-pin TO-247 case, it supports through-hole mounting to traditional printed circuit boards.

Featuring a single transistor configuration, it is suitable for power switching and amplification tasks in industrial and electronic systems. The transistor provides reliable operation with a maximum power dissipation of 250 W, which enables it to handle substantial power loads safely.

Operating temperature flexibility from -65°C to 150°C makes the MJW18020G well suited for use in environments subject to temperature extremes. Its electrical characteristics include a minimum DC current gain of 14, a maximum collector-base voltage of 1000 V, and an emitter-base voltage of 9 V, offering stable switching and amplification capabilities.

The device has a moderate maximum transition frequency of 1 MHz, making it appropriate for power applications requiring moderate switching speeds. Its physical dimensions are 16.26 mm in length, 41.85 mm in height, and 5.3 mm in width, allowing for compact integration.

Single transistor configuration suitable for high power electronic systems. Maximum power dissipation rating of 250 W assures dependable operation. Wide temperature range from -65°C to 150°C supports harsh operating conditions.

High voltage tolerance with collector-emitter voltage of 450 V and collector-base voltage of 1000 V. Standard 3-pin TO-247 package with through-hole mounting for ease of installation. Compact size aids in efficient PCB space utilization.

Minimum DC current gain of 14 ensures effective signal amplification. Maximum transition frequency of 1 MHz caters to moderate switching speed requirements. This transistor is commonly used in power supply circuits, motor controls, and industrial switching applications where high voltage and current handling are critical.

Browse the complete category of Bipolar Transistors at EnvMart for similar high-quality semiconductor components designed for industrial and commercial electronics.

onsemi Transistor NPN 30 A 450 V 3-Pin TO-247 MJW18020G
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Frequently Asked Questions

The maximum collector current for the MJW18020G is 30 A, making it suitable for high power applications.

This model has a maximum collector-emitter voltage rating of 450 V, allowing it to handle high voltage applications effectively.

The maximum power dissipation rating is 250 W, ensuring reliable performance under substantial power loads.

The operating temperature range for the MJW18020G is from -65°C to 150°C, making it suitable for diverse environments.

The maximum transition frequency of the MJW18020G is 1 MHz, suitable for moderate switching speeds in applications.

It features a through-hole mount type, which enables easy installation on printed circuit boards.

This transistor has a pin count of 3, matching the standard TO-247 pinout for compatibility with various circuits.

The minimum DC current gain (hFE) for the MJW18020G is 14, which ensures effective signal amplification.

The maximum collector-base voltage rating for this model is 1000 V, providing enhanced voltage tolerance.

The maximum emitter-base voltage (VEBO) for the MJW18020G is 9 V, ensuring device safety during operation.

The dimensions of this model are 16.26 mm in length, 41.85 mm in height, and 5.3 mm in width.

This transistor is commonly used in power supply circuits, motor controls, and industrial switching applications requiring high voltage and current handling.

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