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Nexperia N-Channel MOSFET, 82 A, 80 V Enhancement Mode, 4-Pin SOT-669 Surface Mount PSMN8R2-80YS,115

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Nexperia N-Channel MOSFET, 82 A, 80 V Enhancement Mode, 4-Pin SOT-669 Surface Mount PSMN8R2-80YS,115

Name: Nexperia N-Channel MOSFET, 82 A, 80 V Enhancement Mode, 4-Pin SOT-669 Surface Mount PSMN8R2-80YS,115
Brand: Nexperia
SKU: 315423
Price: 1.57 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1.1mm
Length	5mm
Model	PSMN8R2-80YS,115
Width	4.1mm
Mount Type	Surface
Maximum Operating Temperature	175°C
Package Type	SOT-669
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	N
Maximum Continuous Drain Current Id	82A
Maximum Drain Source Voltage Vds	80V
Maximum Drain Source Resistance Rds	13.4mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	130W
Typical Gate Charge Qg @ Vgs	55nC
Maximum Gate Source Voltage Vgs	-20, +20V
Vishay N-Channel MOSFET, 60 A, 80 V PowerPAK SO-8L SIJ482DP-T1-GE3Brand	Vishay

Key Features

This MOSFET features a maximum continuous drain current of 82 A.
It supports a maximum drain-source voltage of 80 V.
The package type is a compact 4-pin SOT-669 surface mount design.
Maximum power dissipation rating is 130 W.
The gate charge is typically 55 nC at Vgs of 5 V.
It operates reliably between -55°C and 175°C ambient temperatures.
Maximum gate-source voltage ranges between -20 V and +20 V.
Drain-source on-resistance is low, at 13.4 mΩ maximum.

Product Description

The Nexperia PSMN8R2-80YS,115 is a high-quality N-Channel MOSFET designed for demanding power electronic applications. It features an enhancement mode operation with a maximum continuous drain current of 82 A and a maximum drain-source voltage of 80 V, making it suitable for efficient switching and power control tasks.

Housed in a 4-pin SOT-669 surface mount package, this device offers low on-resistance of 13.4 milliohms, which minimizes conduction losses. The typical gate charge of 55 nC at a gate-source voltage of 5 V ensures fast switching speeds.

Operational temperature ranges from -55°C to a maximum of 175°C allow this MOSFET to perform reliably in industrial, consumer electronics, and automotive environments. The maximum gate-source voltage of -20 V to +20 V provides tolerance against transients during operation.

The compact physical dimensions (5 mm length, 4.1 mm width, and 1.1 mm height) allow efficient PCB real estate use while maintaining robustness. This MOSFET is ideal for power management circuits, DC-DC converters, motor controls, and other semiconductor discrete applications requiring high current and voltage ratings.

This MOSFET features a maximum continuous drain current of 82 A. It supports a maximum drain-source voltage of 80 V. The package type is a compact 4-pin SOT-669 surface mount design. Maximum power dissipation rating is 130 W.

The gate charge is typically 55 nC at Vgs of 5 V. It operates reliably between -55°C and 175°C ambient temperatures. Maximum gate-source voltage ranges between -20 V and +20 V. Drain-source on-resistance is low, at 13.4 mΩ maximum.

Physical dimensions include length 5 mm, width 4.1 mm, and height 1.1 mm. Applications include power management, motor control, and switching in industrial and consumer electronics.

These features make the Nexperia PSMN8R2-80YS,115 MOSFET a reliable choice for engineers focusing on efficiency and performance in power electronic designs. For a broad selection of semiconductor components, explore our extensive catalog at EnvMart.