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Nexperia N-Channel MOSFET 100 A 30 V Enhancement 4-Pin SOT-669 PSMN1R2-30YLC,115
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 5mm |
| Model | PSMN1R2-30YLC,115 |
| Width | 4.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-669 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 1.65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 215W |
| Typical Gate Charge Qg @ Vgs | 78nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET features a 4-pin SOT-669 surface mount package.
- Maximum power dissipation is 215 W allowing high power handling.
- Drain-source resistance is low at 1.65 milliohms for efficiency.
- Operating temperature range is wide from -55°C to 175°C.
- Typical gate charge at gate-source voltage of 8 V is 78 nC.
- Maximum gate-source voltage rating is -20 V to +20 V.
- Compact dimensions include 5 mm length, 4.1 mm width, and 1.1 mm height.
- Designed with enhancement mode channel for precise switching.
Product Description
Nexperia PSMN1R2-30YLC,115 is a high current N-Channel MOSFET designed with enhancement mode channel operation, rated for a maximum continuous drain current of 100 A and a drain-source voltage of 30 V. It is housed in a low-profile 4-pin SOT-669 surface mount package measuring 5 mm in length, 4.1 mm in width, and 1.1 mm in height, supporting compact circuit board designs. The device efficiently dissipates up to 215 W of power, making it suitable for demanding electronic applications.
With its low drain-source resistance of 1.65 milliohms, this MOSFET ensures minimal conduction losses for high efficiency in switching circuits. It supports a wide operating temperature range from -55°C to 175°C, allowing deployment in harsh industrial, automotive, and commercial environments. The maximum gate-source voltage rating of -20 V to +20 V and a typical gate charge of 78 nC at 8 V gate-source voltage provide stable switching performance and control.
This MOSFET’s forward voltage of 1.2 V optimizes forward conduction characteristics, suitable for power management and signal amplification tasks. Manufactured in the Philippines, it upholds rigorous quality control standards. Ideal applications include power conversion, motor controls, switch mode power supplies (SMPS), and industrial switching systems.
This MOSFET features a 4-pin SOT-669 surface mount package. Maximum power dissipation is 215 W allowing high power handling. Drain-source resistance is low at 1.65 milliohms for efficiency. Operating temperature range is wide from -55°C to 175°C.
Typical gate charge at gate-source voltage of 8 V is 78 nC. Maximum gate-source voltage rating is -20 V to +20 V. Compact dimensions include 5 mm length, 4.1 mm width, and 1.1 mm height. Designed with enhancement mode channel for precise switching.
Forward voltage drop of 1.2 V supports controlled conduction losses. Manufactured in Philippines ensuring quality production standards.
This product is categorized under MOSFET components and suitable for use in electronics manufacturing, power management, and industrial automation. Explore more components in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
It can dissipate a maximum power of 215 W, allowing for high power handling capabilities.
The dimensions of the SOT-669 package are 5 mm in length, 4.1 mm in width, and 1.1 mm in height.
The drain-source resistance is low at 1.65 milliohms, which contributes to its efficiency.
It operates within a wide temperature range from -55°C to 175°C.
The typical gate charge at a gate-source voltage of 8 V is 78 nC.
The maximum gate-source voltage rating is -20 V to +20 V.
This model uses an N-channel type with enhancement mode operation.
The forward voltage drop is 1.2 V, optimizing its conduction characteristics.
This MOSFET is manufactured in the Philippines, ensuring quality production standards.
It is suitable for applications such as power conversion, motor controls, and switch mode power supplies (SMPS).
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