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Nexperia N-Channel MOSFET 89 A 60 V Enhancement Mode 4-Pin SOT-669 Surface Mount PSMN7R0-60YS,115

Category Power MOSFET Brand Nexperia Condition New

Specifications

Country of Origin Philippines
Brand Nexperia
Height 1.1mm
Length 5mm
Model PSMN7R0-60YS,115
Width 4.1mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type SOT-669
Minimum Operating Temperature -55°C
Pin Count 4
Channel Type N
Maximum Continuous Drain Current Id 89A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 10.2mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 117W
Typical Gate Charge Qg @ Vgs 45nC
Maximum Gate Source Voltage Vgs -20, +20V
Vishay N-Channel MOSFET, 60 A, 80 V PowerPAK SO-8L SIJ482DP-T1-GE3Brand Vishay

Key Features

  • Supports a maximum continuous drain current of 89 amperes.
  • Offers a maximum drain-source voltage of 60 volts for reliable operation.
  • Features an enhancement mode with low drain-source resistance of 10.2 milliohms.
  • Packaged in a compact 4-pin SOT-669 surface mount package.
  • Maximum power dissipation rating of 117 watts ensures robust performance.
  • Operates within a wide temperature range from -55°C to 175°C.
  • Typical gate charge of 45 nanocoulombs at 4.5 volts gate-source voltage.
  • Maximum gate-source voltage rating of ±20 volts ensures gate protection.

Product Description

Nexperia PSMN7R0-60YS,115 is a high-performance N-Channel MOSFET transistor designed for demanding electronic and power management applications. It supports a maximum continuous drain current of 89 amperes and a maximum drain-source voltage of 60 volts. Its enhancement mode operation and low on-resistance of 10.2 milliohms provide efficient switching and power handling.

This MOSFET is housed in a 4-pin SOT-669 surface mount package, facilitating compact PCB designs and ease of assembly in modern electronics. It has a typical gate charge of 45 nanocoulombs at 4.5 volts gate-source voltage which allows for fast switching performance in power conversion and motor control applications.

The device supports a maximum power dissipation of 117 watts and operates reliably across a wide temperature range from -55°C to 175°C, making it suitable for harsh industrial, automotive, and consumer electronics environments. It includes built-in protection with a maximum gate-source voltage rating of ±20 volts.

Its compact physical dimensions - 5 mm length, 4.1 mm width, and 1.1 mm height - allow integration into space-constrained systems. This MOSFET is made in the Philippines, adhering to strict quality standards though no specific certifications are listed.

Applications include power management in industrial machinery, automotive electronics, DC-DC converters, and other high-efficiency switching circuits. The product is ideal for engineers and designers requiring a reliable power transistor with robust electrical and thermal characteristics.

Supports a maximum continuous drain current of 89 amperes. Maximum drain-source voltage of 60 volts. Enhancement mode operation with low drain-source resistance of 10.2 milliohms. 4-pin SOT-669 surface mount package for compact design.

Maximum power dissipation of 117 watts for robust operation. Wide operating temperature range from -55°C to 175°C. Typical gate charge of 45 nanocoulombs at 4.5 volts. Maximum gate-source voltage of ±20 volts. Compact dimensions: 5 mm length, 4.1 mm width, 1.1 mm height.

Explore more electronic components and power semiconductors on EnvMart for your industrial and commercial projects.

Explore more products in our Power MOSFET category.

Nexperia N-Channel MOSFET 89 A 60 V Enhancement Mode 4-Pin SOT-669 Surface Mount PSMN7R0-60YS,115
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Frequently Asked Questions

The maximum continuous drain current for this model is 89 amperes.

It has a maximum drain-source voltage rating of 60 volts.

This model is packaged in a compact 4-pin SOT-669 surface mount package.

The maximum power dissipation rating is 117 watts.

The typical gate charge at a gate-source voltage of 4.5 volts is 45 nanocoulombs.

It operates within a wide temperature range from -55°C to 175°C.

The low drain-source resistance is rated at 10.2 milliohms.

The maximum gate-source voltage rating is ±20 volts.

The dimensions are 5 mm in length, 4.1 mm in width, and 1.1 mm in height.

It is suitable for applications in power management for industrial machinery, automotive electronics, and DC-DC converters.

This model features an N-channel type configuration.

The PSMN7R0-60YS,115 is manufactured in the Philippines.

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