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| Country of Origin | Philippines |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 5mm |
| Model | PSMN7R0-60YS,115 |
| Width | 4.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-669 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 89A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 10.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 117W |
| Typical Gate Charge Qg @ Vgs | 45nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Vishay N-Channel MOSFET, 60 A, 80 V PowerPAK SO-8L SIJ482DP-T1-GE3Brand | Vishay |
Nexperia PSMN7R0-60YS,115 is a high-performance N-Channel MOSFET transistor designed for demanding electronic and power management applications. It supports a maximum continuous drain current of 89 amperes and a maximum drain-source voltage of 60 volts. Its enhancement mode operation and low on-resistance of 10.2 milliohms provide efficient switching and power handling.
This MOSFET is housed in a 4-pin SOT-669 surface mount package, facilitating compact PCB designs and ease of assembly in modern electronics. It has a typical gate charge of 45 nanocoulombs at 4.5 volts gate-source voltage which allows for fast switching performance in power conversion and motor control applications.
The device supports a maximum power dissipation of 117 watts and operates reliably across a wide temperature range from -55°C to 175°C, making it suitable for harsh industrial, automotive, and consumer electronics environments. It includes built-in protection with a maximum gate-source voltage rating of ±20 volts.
Its compact physical dimensions - 5 mm length, 4.1 mm width, and 1.1 mm height - allow integration into space-constrained systems. This MOSFET is made in the Philippines, adhering to strict quality standards though no specific certifications are listed.
Applications include power management in industrial machinery, automotive electronics, DC-DC converters, and other high-efficiency switching circuits. The product is ideal for engineers and designers requiring a reliable power transistor with robust electrical and thermal characteristics.
Supports a maximum continuous drain current of 89 amperes. Maximum drain-source voltage of 60 volts. Enhancement mode operation with low drain-source resistance of 10.2 milliohms. 4-pin SOT-669 surface mount package for compact design.
Maximum power dissipation of 117 watts for robust operation. Wide operating temperature range from -55°C to 175°C. Typical gate charge of 45 nanocoulombs at 4.5 volts. Maximum gate-source voltage of ±20 volts. Compact dimensions: 5 mm length, 4.1 mm width, 1.1 mm height.
Explore more electronic components and power semiconductors on EnvMart for your industrial and commercial projects.
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