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Nexperia N-Channel MOSFET 100 A 25 V Enhancement Mode 4-Pin SOT-669 PSMN1R2-25YLC,115
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 5mm |
| Model | PSMN1R2-25YLC,115 |
| Width | 4.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-669 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 179W |
| Typical Gate Charge Qg @ Vgs | 66nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- This MOSFET features a low drain-source resistance of 1.7 milliohms for high efficiency.
- Typical gate charge is 66 nanocoulombs at gate-source voltage of 6V enhancing switching performance.
- The device supports a maximum power dissipation of 179 watts ensuring robust operation.
- Operating temperature range spans from -55°C minimum to 175°C maximum, suitable for demanding environments.
- Compact SOT-669 package dimensions include 5 mm length, 4.1 mm width, and 1.1 mm height for space-efficient PCB mounting.
- Designed for surface mount technology with 4 pins, facilitating automated assembly processes.
- Maximum gate-source voltage rating is ±20V, providing gate voltage flexibility.
- The component complies with no specific industrial standards or automotive certifications.
Product Description
Nexperia PSMN1R2-25YLC,115 is a high-performance N-Channel MOSFET transistor designed for power switching applications. This device operates with an enhancement mode and is packaged in a compact 4-pin SOT-669 surface-mount enclosure, making it ideal for high-density PCB layouts.
It handles a continuous drain current of 100 amperes and supports a maximum drain-source voltage of 25 volts, enabling efficient control of power in circuits requiring high current flow with low voltage. The low on-resistance of 1.7 milliohms reduces conduction losses, improving overall system efficiency.
The typical gate charge of 66 nanocoulombs at 6 volts gate voltage ensures rapid switching capabilities, suitable for PWM and digital switching circuits in industrial, automotive, and consumer electronics sectors. The device can dissipate up to 179 watts of power with adequate heat sinking, supporting high power operation.
Operating temperature limits from -55°C to 175°C allow this MOSFET to function reliably under extreme temperature conditions common in industrial and automotive environments. Its physical dimensions of 5 mm length, 4.1 mm width, and 1.1 mm height combined with surface mount design make it suitable for automated manufacturing and compact system designs.
Low drain-source resistance enhances efficiency and thermal management. Robust power dissipation and temperature ratings ensure reliable performance. Compact SOT-669 package supports high-density PCB integration. Wide operating temperature range suitable for automotive and industrial applications.
Maximum gate-source voltage rating of ±20 volts protects against gate overvoltage. Surface mount 4-pin configuration ensures compatibility with standard PCB assembly. Enhancement mode operation enhances switching behavior for power circuits.
No special industrial or automotive certification standards apply to this device.
This Nexperia MOSFET is widely used in power management, motor drives, switching regulators, and load switching tasks in the electronics industry. It offers reliable, efficient performance in various demanding applications such as industrial automation, electric vehicles, HVAC controls, and consumer electronics.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 amperes.
This MOSFET supports a maximum drain-source voltage of 25 volts.
The low drain-source resistance is 1.7 milliohms, which enhances efficiency.
The typical gate charge at a gate-source voltage of 6V is 66 nanocoulombs.
It can dissipate up to 179 watts of power with adequate heat sinking.
The operating temperature range spans from -55°C to 175°C.
The dimensions of the SOT-669 package are 5 mm in length, 4.1 mm in width, and 1.1 mm in height.
The maximum gate-source voltage rating is ±20 volts.
This model features a 4-pin configuration.
It is designed for surface mount technology.
This MOSFET is suitable for power management, motor drives, switching regulators, and load switching tasks in various sectors including industrial and consumer electronics.
This model features an N-channel type configuration.
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