onsemi Small Signal NPN Transistor 200 mA, 45 V, 3-Pin SOT-23, Surface Mount MMBT6429LT1G

The onsemi MMBT6429LT1G is a Small Signal NPN Bipolar Junction Transistor (BJT) ideal for switching and amplification tasks within various electronic circuits. Packaged in a 3-pin SOT-23 surface mount package, it supports a maximum DC collector current of 200 mA and maximum collector-emitter voltage of 45 V.

This transistor supports a maximum collector base voltage of 55 V and a minimum DC current gain (hFE) of 250, ensuring efficient current amplification in a wide range of applications. Its maximum transition frequency of 100 MHz enables reliable performance in medium to high frequency switching operations.

Power dissipation peaks at 225 mW, with device operation supported up to a maximum temperature of 150°C, suited for demanding industrial and automotive environments. The compact physical dimensions of 3.04 mm length, 2.64 mm height, and 1.4 mm width facilitate dense PCB layouts in electronic device manufacturing.

The MMBT6429LT1G is AEC-Q101 automotive qualified, making it suitable for automotive electronics and other high-reliability applications. It is widely used in semiconductor discrete component assemblies and power management circuits.

This transistor features a maximum collector base voltage of 55 V. It offers a minimum DC current gain (hFE) of 250. The maximum transition frequency is 100 MHz, suitable for high-frequency switching. Maximum power dissipation is 225 mW with an operating temperature up to 150°C.

Small footprint dimensions of 3.04 mm length, 2.64 mm height, and 1.4 mm width enable surface mounting on PCBs. Designed for automotive applications with AEC-Q101 qualification. Ideal for electronic, semiconductor, and discrete bipolar transistor uses in industrial and automotive circuits.

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