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onsemi NPN Power Transistor, 15 A DC Collector Current, 250 V Collector Emitter Voltage, TO-3P Package NJW0281G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 40.3mm |
| Length | 15.8mm |
| Model | NJW0281G |
| Width | 5mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-3P |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 250V dc |
| Minimum DC Current Gain hFE | 75 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 250V dc |
| Maximum Power Dissipation Pd | 150W |
| Maximum DC Collector Current Idc | 15A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
Key Features
- Supports maximum DC collector current of 15 A.
- Maximum collector-emitter voltage rating of 250 V DC for high-voltage applications.
- Packaged in a TO-3P through-hole mount format ensuring reliable mounting and heat dissipation.
- Maximum power dissipation ability of 150 W suitable for demanding power loads.
- Operating temperature range extends from -65°C to 150°C for versatile industrial use.
- High minimum DC current gain of 75 enhances amplification efficiency.
- NPN transistor polarity suitable for common power transistor circuits.
- Three-pin configuration enables straightforward circuit integration.
Product Description
onsemi NJW0281G is a high-power NPN bipolar transistor designed for demanding applications requiring high current and voltage handling capabilities. This transistor features a maximum DC collector current (Idc) of 15 A and can withstand collector-emitter voltages (Vceo) up to 250 V DC. Packaged in a TO-3P through-hole mount type, it offers robust mechanical and thermal properties for industrial usage.
The transistor configuration is single with three pins enabling simplified circuit design and installation. It has a maximum power dissipation rating of 150 W, allowing it to manage substantial power loads without overheating, complemented by a maximum transition frequency of 1 MHz for efficient switching operations.
Designed with an operating temperature range from -65°C minimum to 150°C maximum, NJW0281G is suitable for harsh environmental conditions often encountered in industrial and automotive applications. The minimum DC current gain (hFE) is 75, contributing to stable amplification performance.
This NPN transistor provides a maximum collector-base voltage (VCBO) of 250 V and an emitter-base voltage (VEBO) of 5 V, ensuring versatile operation parameters for various circuits. Its compact dimensions with a width of 5 mm, height of 40.3 mm, and length of 15.8 mm support integration into space-constrained electronic assemblies.
Maximum DC collector current of 15 A supports high power applications. 250 V collector-emitter voltage rating suitable for high voltage operations. TO-3P package offers effective heat dissipation and durability. Wide operating temperature range from -65°C to 150°C for industrial reliability.
Minimum DC current gain of 75 for stable transistor performance.
Commonly used across power electronics, industrial machinery, automotive systems, and power supply circuits, this transistor by onsemi delivers dependable operational stability and long service life. It is a critical component for building efficient and high-performance electronic control and amplification systems.
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Frequently Asked Questions
The maximum DC collector current for the NJW0281G is 15 A, making it suitable for high power applications.
This model has a collector-emitter voltage rating of 250 V DC, which is ideal for high-voltage applications.
The NJW0281G is packaged in a TO-3P through-hole mount format, which ensures reliable mounting and effective heat dissipation.
It has a maximum power dissipation rating of 150 W, allowing it to handle substantial power loads.
The operating temperature range extends from -65°C to 150°C, making it suitable for various industrial applications.
The minimum DC current gain (hFE) for the NJW0281G is 75, enhancing its amplification efficiency.
This transistor features a three-pin configuration, simplifying circuit integration.
The dimensions of this model are 40.3 mm in height, 15.8 mm in length, and 5 mm in width.
The maximum transition frequency for the NJW0281G is 1 MHz, suitable for efficient switching operations.
The NJW0281G utilizes a single transistor configuration, which is common in power transistor circuits.
The maximum emitter-base voltage (VEBO) for this model is 5 V, ensuring versatile operation parameters.
This NPN transistor is commonly used across power electronics, industrial machinery, automotive systems, and power supply circuits.
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