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onsemi Small Signal NPN Bipolar Transistor 800 mA 50 V TO-92 Package BC33725BU

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 20.95mm
Length 5.3mm
Model BC33725BU
Width 4.19mm
Mount Type Through Hole
Series BC337
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature 0°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc 800mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi BC337-025G NPN Bipolar Transistor, 800 mA, 45 V, 3-Pin TO-92Brand ON Semiconductor

Key Features

  • This transistor supports a maximum power dissipation of 625 mW ensuring reliable performance under typical operating conditions.
  • It features a minimum DC current gain (hFE) of 60 for efficient amplification in circuits.
  • The maximum transition frequency is 100 MHz, suitable for high frequency applications.
  • It operates effectively between 0°C and 150°C, providing wide temperature range stability.
  • The compact TO-92 package dimensions are height 20.95 mm, length 5.3 mm, and width 4.19 mm, facilitating easy integration on PCB setups.
  • Designed as a NPN single transistor configuration, ideal for general-purpose amplification and switching.
  • The device meets lightweight and compact design requirements for modern electronic circuits.
  • Package is through hole mount type, facilitating traditional PCB assembly processes.

Product Description

onsemi BC33725BU is a high-quality NPN bipolar junction transistor designed for small signal amplification and switching applications. This transistor supports a maximum DC collector current of 800 mA and a collector emitter voltage of 50 V, making it suitable for low to moderate power electronic circuits.

The transistor is housed in a TO-92 package with 3 pins, providing an efficient through hole mount solution. Its robust thermal characteristics include maximum power dissipation of 625 mW and operating temperatures from 0°C to 150°C, enabling reliable performance under varying environmental conditions.

Boasting a minimum current gain of 60 and a transition frequency of 100 MHz, the BC33725BU transistor is apt for high frequency and amplification tasks. Its compact size with dimensions of 20.95 mm height, 5.3 mm length, and 4.19 mm width supports space-conscious PCB designs.

This transistor's single configuration and NPN polarity make it suitable for diverse industrial, communication, and consumer electronics projects requiring efficient control and switching capabilities.

The BC337 series by onsemi provides consistent quality and reliable operation, making it a popular choice among electronic component engineers and designers. This transistor supports a maximum power dissipation of 625 mW ensuring reliable performance under typical operating conditions.

It features a minimum DC current gain (hFE) of 60 for efficient amplification in circuits. The maximum transition frequency is 100 MHz, suitable for high frequency applications. It operates effectively between 0°C and 150°C, providing wide temperature range stability.

The compact TO-92 package dimensions are height 20.95 mm, length 5.3 mm, and width 4.19 mm, facilitating easy integration on PCB setups. Designed as a NPN single transistor configuration, ideal for general-purpose amplification and switching.

The device meets lightweight and compact design requirements for modern electronic circuits. Package is through hole mount type, facilitating traditional PCB assembly processes.

This transistor is widely used in industrial electronics, power management, consumer devices, and communication equipment. Its proven performance and onsemi’s manufacturing excellence ensure stable operation and easy integration in new or existing designs.

For professionals sourcing reliable Bipolar Transistors, the BC33725BU offers a balanced combination of power handling, gain, and thermal stability supported by onsemi’s quality standards. Explore the range of onsemi semiconductors and components at EnvMart to find compatible and complementary devices for your project needs.

onsemi Small Signal NPN Bipolar Transistor 800 mA 50 V TO-92 Package BC33725BU
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Frequently Asked Questions

The maximum DC collector current for this model is 800 mA.

The maximum collector-emitter voltage (Vceo) is 50 V.

It supports a maximum power dissipation of 625 mW.

The minimum DC current gain (hFE) is 60, which allows for efficient amplification.

The maximum transition frequency for this transistor is 100 MHz, making it suitable for high frequency applications.

The TO-92 package has dimensions of 20.95 mm in height, 5.3 mm in length, and 4.19 mm in width.

It operates effectively between 0°C and 150°C, providing stability across a wide temperature range.

This model features a through hole mount type, facilitating traditional PCB assembly processes.

It is designed as a single NPN transistor configuration, suitable for general-purpose amplification and switching.

The maximum emitter-base voltage (VEBO) is 5 V.

The country of origin for this transistor is India.

This transistor is widely used in industrial electronics, power management, consumer devices, and communication equipment.

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