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STMicroelectronics STripFET N-Channel MOSFET 18 A 200 V Enhancement 3-Pin TO-252 STD20NF20
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD20NF20 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.6V |
Key Features
- This MOSFET is built on the STripFET series optimized for surface mount applications.
- It features a low drain-source resistance of 125 milliohms ensuring efficient power conduction.
- Designed to operate between -55°C to 175°C ambient temperatures for robust use.
- Maximum power dissipation is rated at 110 W to handle high power loads.
- Typical gate charge is 28 nC at Vgs, enabling fast switching performance.
- The device supports gate-source voltages from -20 to +20 volts for flexible drive.
- Compact form factor with dimensions 6.6 mm length, 6.2 mm width, and 2.4 mm height.
- Forward voltage is 1.6 V, suitable for power control applications.
Product Description
STMicroelectronics STD20NF20 is an N-Channel STripFET MOSFET providing 18 A maximum continuous drain current and a drain-source voltage rating of 200 V. Its enhancement mode operation and TO-252 3-pin surface mount package make it ideal for compact, high-efficiency power management circuits.
This device is optimized for industrial and electronic applications requiring reliable switching performance and thermal durability. The low 125 mΩ drain-source resistance reduces conduction losses, improving circuit efficiency and thermal management.
Operating temperature ranges from -55°C to 175°C ensuring stable electrical performance across harsh environments. Maximum power dissipation is rated at 110 W allowing the MOSFET to handle significant load currents when combined with suitable heat sinking.
The gate charge of 28 nC ensures fast switching response, critical for high-frequency power conversion or motor control. The gate-source voltage tolerance of -20 V to +20 V provides flexibility in drive design.
Physical dimensions are compact with a length of 6.6 mm, width of 6.2 mm, and height of 2.4 mm, making it suitable for dense PCB layouts in consumer electronics, automotive electronics, industrial control, and power supply applications.
The characteristic forward voltage of 1.6 V supports efficient conduction with controlled losses. With no specific automotive standard compliance, the device is intended for general industrial and commercial use.
STMicroelectronics MOSFETs like the STD20NF20 feature prominently in electronic component inventories for power management, motor driver circuitry, switching regulators, and other semiconductor discrete component applications. Their high power capability and compact TO-252 package deliver a versatile solution for design engineers.
This MOSFET belongs to the STripFET family designed for surface mount and power applications. Suitable for industrial, electronic manufacturing, and HVAC equipment control systems. Robust operating voltage and current ratings ensure reliability in challenging environments.
Compatible with automated assembly processes due to surface mount packaging. STMicroelectronics products are widely used in commercial and industrial electronic designs worldwide. Explore our full range of MOSFETs and semiconductor components to find compatible parts for your application on EnvMart.
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Frequently Asked Questions
The STD20NF20 has a maximum continuous drain current of 18 A.
This model has a maximum drain-source voltage rating of 200 V.
The typical gate charge for this MOSFET is 28 nC at Vgs.
The dimensions of this model are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
The maximum power dissipation for the STD20NF20 is rated at 110 W.
The operating temperature range for the STD20NF20 is from -55°C to 175°C.
This MOSFET uses a TO-252 3-pin surface mount package.
The maximum gate-source voltage for this model is -20 V to +20 V.
The drain-source resistance of this MOSFET is 125 mΩ.
This model is suitable for power management circuits, motor driver circuitry, and switching regulators.
The characteristic forward voltage for this MOSFET is 1.6 V.
This MOSFET features an N-channel design with enhancement mode operation.
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