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STMicroelectronics MDmesh N-Channel MOSFET 5 A, 600 V Enhancement, 3-Pin TO-252 STD7NM60N
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD7NM60N |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 900mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET supports enhancement mode operation for efficient switching.
- The device features a low maximum drain-source resistance of 900 milliohms.
- It supports maximum power dissipation of 45 watts, suitable for high-power applications.
- Designed for surface mount technology with 3 pins for easy PCB integration.
- Operates in a wide temperature range from -55 to 150 degrees Celsius.
- The typical gate charge at 14 nC enables fast switching performance.
- It has a maximum gate-source voltage rating of ±25 volts ensuring reliable operation.
- Compact dimensions of 6.6 mm length, 6.2 mm width, and 2.4 mm height.
Product Description
STMicroelectronics STD7NM60N is a MDmesh N-Channel MOSFET designed for use in power electronics applications. It provides continuous drain current of 5 A and a maximum drain-source voltage of 600 V, making it suitable for a wide range of industrial and electronic circuits. The device operates in enhancement mode, housed in a compact TO-252 package optimized for surface mounting.
The MOSFET's low on-resistance of 900 milliohms reduces conduction losses, improving energy efficiency in switching and power management applications. It can dissipate up to 45 watts of power, making it robust for demanding thermal conditions. The device supports operating temperatures from -55°C to 150°C, covering harsh environmental conditions encountered in industrial installations.
Its typical gate charge of 14 nC at Vgs supports rapid switching speeds, essential for high-frequency power conversion and motor control. The maximum gate-source voltage rating of ±25 V prevents damage from excessive gate voltages. Its compact footprint with dimensions of 6.6 mm length, 6.2 mm width, and 2.4 mm height enables space efficiency on PCB layouts.
This 3-pin device is designed for surface mount technology, facilitating automated assembly and reliable mechanical connection. Although it lacks specific automotive certifications, it is suitable for various commercial and industrial electronics, including power supply units, inverters, and switching regulators.
This MOSFET supports enhancement mode operation for efficient switching. The device features a low maximum drain-source resistance of 900 milliohms. It supports maximum power dissipation of 45 watts, suitable for high-power applications.
Designed for surface mount technology with 3 pins for easy PCB integration. Operates in a wide temperature range from -55 to 150 degrees Celsius. The typical gate charge at 14 nC enables fast switching performance. It has a maximum gate-source voltage rating of ±25 volts ensuring reliable operation.
Compact dimensions of 6.6 mm length, 6.2 mm width, and 2.4 mm height. No automotive certification; designed for general industrial and electronic component use.
This MDmesh N-Channel MOSFET STD7NM60N forms part of their broad portfolio of power discrete components designed for efficiency and reliability. Explore more STMicroelectronics products and other MOSFET components in the Electronics & Electricals catalog at EnvMart for your industrial and electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 5 A.
This model has a maximum drain-source voltage rating of 600 V.
The typical gate charge at Vgs for this device is 14 nC.
It supports a maximum power dissipation of 45 watts.
The dimensions of this MOSFET are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
The maximum gate-source voltage rating is ±25 volts.
The maximum drain-source resistance is 900 milliohms.
It operates in a wide temperature range from -55°C to 150°C.
This MOSFET features a 3-pin configuration.
This model is designed for surface mount technology.
It utilizes an N-channel configuration.
This MOSFET belongs to the MDmesh series.
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