DiodesZetex Small Signal PNP Transistor BC857CT-7-F, -100 mA, -45 V, 3-Pin SOT-523 BC857CT-7-F

DiodesZetex BC857CT-7-F is a high-performance small signal PNP transistor designed for discrete semiconductor applications requiring reliable switching and amplification capabilities. Packaged in a compact 3-pin SOT-523 surface mount type, it is well-suited for use in automated assembly and space-constrained electronic circuits.

This transistor supports a maximum DC collector current of 100 mA and boasts a collector-emitter voltage rating of -45 V, making it ideal for low-power signal amplification in consumer electronics, instrumentation, and automotive electronics conforming to the AEC-Q101 standard. The device features a high minimum current gain (hFE) of 420, enhancing performance in amplification circuits.

Operating over a wide temperature range from -55°C to 150°C, the BC857CT-7-F ensures reliable operation under various environmental conditions typical in industrial, automotive, and commercial electronics. Its low power dissipation rating of 150 mW makes it suitable for compact, efficient designs. Compact physical dimensions (1.7 mm length, 1.75 mm width, and 0.9 mm height) allow integration into densely packed PCBs.

This product is extensively tested for quality and reliability but does not carry additional standards or approvals beyond AEC-Q101. It is commonly used in industrial control systems, consumer electronic devices, automotive control modules, and HVAC controls where small signal transistor operation is required.

Maximum collector current: 100 mA. Maximum collector-emitter voltage: 45 V. High gain with minimum hFE 420. Wide temperature operational range from -55°C to 150°C. Compact surface mount transistor in SOT-523 package. Low power dissipation at 150 mW.

Automotive grade with AEC-Q101 certification. Three-pin configuration for simple integration.

Ideal for various electronics applications, the BC857CT-7-F supports both industrial and automotive electronics designs where efficient, reliable PNP transistor functionality is demanded.

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