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Vishay Schottky Barrier Schottky Diode 120 V 6 A Surface Mount TO-252 Package V6PW12HM3/I
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | V6PW12HM3/I |
| Mount Type | Surface |
| Series | eSMP |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Automotive Standard | AEC-Q101 |
| Maximum Continuous Forward Current If | 6A |
| Peak Reverse Repetitive Voltage Vrrm | 120V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 0.62V |
Key Features
- Constructed with trench MOS Schottky technology for high efficiency operation.
- Compact low profile design with typical height of 1.3 mm for space-constrained electronic circuits.
- Suitable for use in DC/DC converters, freewheeling diode circuits, and polarity protection.
- Maximum continuous forward current of 6 A ensures robust performance.
- High peak non-repetitive forward surge current rating of 100 A.
- Wide operating temperature range from -40°C to 175°C for reliable operation.
- Package type TO-252 enables automated placement.
- Meets automotive standard AEC-Q101 and RoHS compliant.
Product Description
Vishay V6PW12HM3/I is a high current density Schottky barrier diode utilizing trench MOS technology, encapsulated in a surface-mount TO-252 package. It supports a peak reverse repetitive voltage of 120 V and a maximum continuous forward current of 6 A, making it ideal for power conversion and protection circuits.
This diode features a very low profile of approximately 1.3 mm height, enabling its integration into compact electronic assemblies commonly used in industrial and automotive electronics. The device offers high efficiency through low forward voltage drop of 0.62 V, minimizing power dissipation and thermal load.
The V6PW12HM3/I diode complies with the automotive industry standard AEC-Q101 and RoHS directives, making it suitable for automotive electronics, industrial control systems, and power management applications. It can withstand a peak non-repetitive forward surge current of up to 100 A, providing robustness for transient conditions.
Typical applications include DC/DC converters, freewheeling diodes in motor drives, and reverse polarity protection in power supplies. The device's surface mount form factor TO-252 package supports automated pick-and-place assembly line production.
Constructed using trench MOS Schottky technology for low forward voltage drop. Compact, low profile TO-252 surface mount package. Automotive grade AEC-Q101 compliant. Wide operating temperature range of -40°C to 175°C. Peak surge current capability of 100 A.
Low power losses enable efficient power conversion. RoHS compliant and environmentally friendly. Designed for automated manufacturing processes. This Vishay Schottky Diode is a reliable choice for industrial, automotive, and commercial power electronics requiring fast switching and low conduction losses.
Explore more Schottky Barrier Diodes and Rectifiers by Vishay on EnvMart to find compatible high-quality semiconductor components for your electronics projects and manufacturing needs.
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Frequently Asked Questions
The maximum reverse repetitive voltage rating of this Schottky diode is 120 V.
This model has a maximum continuous forward current rating of 6 A.
The diode can withstand a peak non-repetitive forward surge current of up to 100 A.
It operates within a wide temperature range from -40°C to 175°C.
The V6PW12HM3/I is packaged in a TO-252 surface mount configuration.
Yes, it complies with the automotive standard AEC-Q101.
The maximum forward voltage drop is 0.62 V.
This diode is suitable for applications such as DC/DC converters, freewheeling diodes, and reverse polarity protection.
It is constructed using trench MOS Schottky technology for high efficiency operation.
This model is RoHS compliant, ensuring it meets environmental regulations.
The typical height of the TO-252 package is approximately 1.3 mm.
The country of origin for this diode is India.
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