Nexperia Type P-Channel Enhancement MOSFET 22.2 A, 30 V, 8-Pin MLPAK33 PXP6R1-30QLJ

Nexperia PXP6R1-30QLJ Type P-Channel MOSFET is a high-performance enhancement mode field effect transistor designed for surface mounting applications. This device features trench MOSFET technology enclosed in an 8-pin MLPAK33 (SOT8002) plastic package, ideal for compact and efficient electronic systems requiring reliable switching at high currents.

With a maximum continuous drain current of 22.2 A and maximum drain-source voltage of 30 V, this MOSFET is well suited for power management in various industrial and commercial electronic equipment. The maximum power dissipation rating of 81 W combined with a low drain-source resistance of 13.6 mΩ ensures efficient operation with low power loss and heat generation.

The device supports a broad operating temperature range from -55°C to 175°C, ensuring durability and stability even under harsh thermal conditions. Its maximum gate-source voltage of 20 V provides robust threshold control, enabling its use in battery management systems, DC-to-DC converters, and switching circuits in industrial, computing, and consumer electronics applications.

Packaged for surface mount technology (SMT), the MLPAK33 package provides excellent mechanical integrity and thermal performance, suitable for automated PCB assembly processes. This MOSFET is compliant with RoHS regulations but does not carry additional automotive or other specific certifications.

The PXP6R1-30QLJ offers a balance of power efficiency, thermal management, and compact packaging to meet demanding electronic and industrial control system requirements. Operates with a maximum continuous drain current of 22.2 A.

Maximum drain-source voltage of 30 V supports medium-voltage applications. 8-pin MLPAK33 surface mount package ensures compact PCB footprint. Low drain-source resistance of 13.6 mΩ improves efficiency. Robust operating temperature range from -55°C to 175°C.

Maximum power dissipation of 81 W supports high load conditions. Enhancement mode device with a maximum gate-source voltage of 20 V. Ideal for battery management, DC-to-DC converters, and switching circuits. Trench MOSFET technology provides low threshold voltage and improved switching.

Compliant with environmental regulations including RoHS. Explore the Electronics & Electricals category at EnvMart for more high-quality semiconductors and power management components from Nexperia and other leading brands.

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