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STMicroelectronics STW N-Channel Power MOSFET, 55 A, 30 V, 480 W, Enhancement Mode, 4-Pin TO-247 STWA75N65DM6
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Model | STWA75N65DM6 |
| Mount Type | Through Hole |
| Series | STW |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | UL |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 480W |
| Typical Gate Charge Qg @ Vgs | 118nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.5V |
Key Features
- Enhancement mode channel with low gate charge of 118 nC at Vgs.
- Maximum power dissipation of 480 watts for high efficiency.
- 4-pin through-hole mount design in TO-247 package.
- Maximum continuous drain current is 55 amperes.
- Low drain-source resistance of 45 milliohms supports efficient switching.
- Operating temperature ranges from -55°C to 150°C.
- UL approved and compliant with automotive AEC-Q101 standard.
- Fast recovery diode technology reduces switching losses.
Product Description
STMicroelectronics STWA75N65DM6 is a high-voltage N-channel power MOSFET designed for industrial and automotive applications. Featuring a TO-247 package and 4 pins, it supports a continuous drain current of 55 A and a maximum drain-source voltage of 30 V, making it suitable for high efficiency power conversion and switching circuits.
This enhancement mode MOSFET offers a low gate charge of 118 nC at the gate-source voltage, enabling fast switching and reduced power loss. With a maximum power dissipation of 480 W and an ultra-low on resistance of 45 milliohms, it delivers excellent performance for applications such as motor controls, power supplies, and bridge topologies.
Its rugged design includes a fast-recovery body diode, high dv/dt ruggedness, and Zener protection, ensuring reliable operation under demanding conditions. Operating temperatures range from -55°C to 150°C, and the device is tested for avalanche robustness. It is UL certified and compliant with automotive standard AEC-Q101, suitable for automotive-grade electronics.
Enhancement mode N-channel MOSFET with TO-247 package and 4 pin count. Maximum continuous drain current of 55 A at 30 V maximum drain-source voltage. Low on-resistance of 45 mΩ and typical gate charge of 118 nC improve efficiency.
Maximum power dissipation of 480 W supports high-performance applications. Operating temperature range from -55°C up to 150°C with fast recovery diode technology. UL approval and automotive AEC-Q101 qualification ensure quality and reliability.
Fast switching behavior suitable for ZVS phase-shift converters and bridge topologies. Robust design includes avalanche tested diode and Zener protection for durability.
This power MOSFET is ideal for industrial, automotive, and power management applications requiring efficient switching and high current capability. Explore more components in the Power MOSFET category at EnvMart for your electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 55 A.
This power MOSFET operates within a temperature range of -55°C to 150°C.
It has a maximum power dissipation of 480 W, supporting high-performance applications.
The typical gate charge at Vgs is 118 nC, which aids in fast switching.
The device comes in a TO-247 package with a pin count of 4.
The maximum drain-source voltage for this MOSFET is 30 V.
It features an enhancement mode N-channel design.
The maximum drain-source resistance is 45 milliohms, which supports efficient switching performance.
Yes, it is compliant with the automotive AEC-Q101 standard.
This model is UL approved, ensuring compliance with safety standards.
It is suitable for industrial and automotive applications, particularly in power management and motor control.
This device uses a through-hole mount design.
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