Nexperia N-Channel Enhancement Mode MOSFET 10.3 A 25 V Surface Mount 8-Pin MLPAK33 PXN7R7-25QLJ

Nexperia PXN7R7-25QLJ is an N-Channel enhancement mode Field-Effect Transistor (FET) designed for high efficiency switching applications in electronic systems. It features a maximum continuous drain current of 10.3 A and a maximum drain-source voltage of 25 V, safely handling power dissipation up to 12.5 W.

Housed in a compact MLPAK33 surface-mount package with 8 pins, measuring 3.3 x 3.3 mm, this MOSFET employs trench technology delivering ultra-low gate charge (QG) and gate-drain charge (QGD), which reduces switching losses and improves system efficiency, especially in high-frequency environments.

The device is compatible with logic-level drivers and provides soft-recovery switching characteristics that minimize voltage spikes and electromagnetic interference (EMI), making it ideal for power management and switching circuits in industrial, electronics, automotive, and consumer applications.

Trench MOSFET technology for enhanced performance. Logic-level compatible for simplified integration. Ultra-low gate charge reduces switching losses and improves efficiency. Soft-recovery switching to reduce spiking and EMI noise.

Compact MLPAK33 (3.3 x 3.3 mm) surface mount package. Wide operating temperature range of -55°C to 150°C. Maximum gate-source voltage of 20 V for reliable operation. Handles continuous drain current up to 10.3 A and power dissipation of 12.5 W.

This MOSFET is commonly used in applications like power supply modules, DC-DC converters, industrial controllers, automotive electronics, and other electronic systems requiring efficient high-speed switching.

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