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Nexperia N-Channel MOSFET 42A 60V Enhancement Mode 8-Pin MLPAK33 PXN012-60QLJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXN012-60QLJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 42A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Maximum continuous drain current of 42 amperes allows high current load applications.
- Drain to source voltage rating up to 60 volts ensures robust voltage handling.
- The enhancement mode channel is compatible with logic level drive.
- Low maximum drain-source resistance of 13.6 milliohms minimizes power losses.
- Package size of 3.3 mm x 3.3 mm provides thermally efficient compact mounting.
- Supports maximum gate-source voltage of 20 volts for control stability.
- Wide operating temperature range from -55°C to 150°C suitable for diverse industrial environments.
- Surface mount package type suits modern PCB assembly techniques.
Product Description
Nexperia PXN012-60QLJ N-Channel MOSFET is a high-performance logic level enhancement mode power MOSFET intended for applications requiring efficient switching and power handling. With a maximum continuous drain current of 42 amps and a drain-source voltage rating of 60 volts, this device is designed for robust usage in industrial electronics and power management circuits.
The MOSFET utilizes trench technology and is housed in an MLPAK33 surface mount package, which measures approximately 3.3 mm by 3.3 mm, offering compactness and effective thermal dissipation. The eight-pin layout provides multiple connection options for improved circuit design flexibility.
This device supports a maximum gate-source voltage of 20 volts and features a low maximum drain-source resistance (Rds(on)) of 13.6 milliohms, contributing to efficient power conversion and reduced energy losses. The MOSFET operates reliably across a broad temperature range, from -55 degrees Celsius up to 150 degrees Celsius, making it suitable for demanding industrial, automotive, and power electronics applications.
Common applications include power switch modules, voltage regulators, and motor control in industrial automation, HVAC systems, and manufacturing equipment. The package and electrical characteristics make it ideal for replacing legacy power MOSFETs requiring surface mount assembly with improved thermal performance.
Maximum continuous drain current of 42 amperes. Drain-source voltage rating of 60 volts. Enhancement mode N-channel logic level MOSFET. Low Rds(on) resistance at 13.6 milliohms. Compact MLPAK33 package for surface mounting.
Maximum gate-source voltage of 20 volts. Operating temperature range from -55°C to 150°C. 8-pin configuration enhancing connection options.
The PXN012-60QLJ MOSFET is a reliable choice for engineers designing industrial power electronics circuits, offering a balance of high current capability, low on-resistance, and a compact package. It supports modern PCB manufacturing processes and is aligned with industrial temperature and power requirements. Explore more power semiconductor devices and related electronic components within our Electronics & Electricals catalog on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 42 amperes, allowing it to handle high current load applications effectively.
This MOSFET has a drain-source voltage rating of up to 60 volts, ensuring robust voltage handling for various applications.
The PXN012-60QLJ is housed in an MLPAK33 surface mount package, which measures approximately 3.3 mm by 3.3 mm.
This model supports a maximum gate-source voltage of 20 volts, providing control stability in circuit designs.
The maximum drain-source resistance (Rds(on)) for this MOSFET is 13.6 milliohms, which helps minimize power losses during operation.
This model operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for diverse industrial environments.
The PXN012-60QLJ features an 8-pin configuration, enhancing connection options for improved circuit design flexibility.
This device utilizes an enhancement mode N-channel, which is compatible with logic level drive.
Common applications for this MOSFET include power switch modules, voltage regulators, and motor control in industrial automation and HVAC systems.
The maximum power dissipation for the PXN012-60QLJ is 12.5 watts, allowing it to manage heat effectively during operation.
This MOSFET uses a surface mount type, suitable for modern PCB assembly techniques.
The country of origin for this MOSFET is India.
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