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STMicroelectronics N-Channel MOSFET 55 A, 30 V Enhancement, 4-Pin TO-247 Package STWA32N65DM6AG
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 5.1mm |
| Length | 40.92mm |
| Model | STWA32N65DM6AG |
| Width | 15.8mm |
| Mount Type | Through Hole |
| Series | STW |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | UL |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 320W |
| Typical Gate Charge Qg @ Vgs | 52.6nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.5V |
Key Features
- Supports through-hole mounting with 4-pin configuration.
- Has low maximum drain-source resistance of 45 milliohms for efficiency.
- Capable of dissipating 320 W power with robust thermal design.
- Features fast recovery body diode and excellent switching behavior.
- Meets AEC-Q101 automotive standard and is UL approved.
- Operates from -55°C to 150°C without performance loss.
- Typical gate charge of 52.6 nanoCoulombs ensures quick switching.
- Zener-protected and 100% avalanche tested for ruggedness.
Product Description
STMicroelectronics STWA32N65DM6AG is a high-voltage N-channel Power MOSFET designed for industrial applications requiring robust power switching at low voltages.
This enhancement mode device supports a maximum continuous drain current of 55 A and a drain-source voltage rating of 30 V, housed in a reliable TO-247 4-pin through-hole package enabling easy PCB assembly.
It offers low drain-source on resistance (45 milliohms) contributing to efficient conduction and reduced power losses, along with a maximum power dissipation of 320 W, making it suitable for high power applications.
With a typical gate charge of 52.6 nC and fast recovery diode characteristics, it ensures fast and efficient switching performance critical for converters and power bridges.
The device is compliant with automotive AEC-Q101 standards and UL approved, designed to operate reliably over a broad temperature range from -55°C to 150°C, ensuring durability under harsh conditions.
The MOSFET is ruggedly tested for avalanche conditions and dv/dt stress, including zener protection, making it a dependable choice for various automotive, industrial, and power management circuits.
Supports through-hole mounting in TO-247 package. Fast recovery body diode lowers switching losses. Low gate charge facilitates high-efficiency designs. AEC-Q101 qualification ensures automotive reliability. Wide operating temperature range from -55°C to 150°C.
Robust construction with 100% avalanche testing validity. Ideal for high-efficiency bridge and zero-voltage switching (ZVS) topologies. Dimensions: Length 40.92 mm, Width 15.8 mm, Height 5.1 mm. Advanced power semiconductor for industrial and automotive use.
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Frequently Asked Questions
The maximum continuous drain current for this model is 55 A.
It has a maximum drain-source voltage rating of 30 V.
This MOSFET can dissipate a maximum power of 320 W.
The typical gate charge is 52.6 nanoCoulombs (nC).
It features a low maximum drain-source resistance of 45 milliohms (mΩ).
The dimensions of the TO-247 package are 40.92 mm in length, 15.8 mm in width, and 5.1 mm in height.
It operates reliably over a temperature range from -55°C to 150°C.
Yes, it meets the AEC-Q101 automotive standard.
This model supports through-hole mounting in a 4-pin configuration.
It is UL approved, ensuring compliance with safety standards.
It includes a fast recovery body diode and a low gate charge, which enhance its switching performance.
This device is an N-channel enhancement mode MOSFET.
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