Infineon Single IGBT Module 1600 A 3300 V TRENCHSTOP™ IGBT4 with Emitter Controlled Diode AG-IHVB130 FZ1600R33HE4BPSA1

Infineon FZ1600R33HE4BPSA1 is a high-power single IGBT module designed with advanced TRENCHSTOP™ IGBT4 technology and an emitter controlled diode, delivering superior electrical performance and reliability. Rated for a maximum continuous collector current of 1600 A and a voltage of 3300 V, this module is suited for demanding industrial power applications.

The device incorporates two transistors in a single switch configuration within the AG-IHVB130 package, allowing for efficient power conversion with minimal losses owing to its low saturation voltage of 3.25 V. Its robust AlSiC base plate contributes to enhanced thermal cycling endurance, vital for long-term industrial use.

Engineered to operate across a broad temperature range from -40°C to 150°C, this IGBT module meets stringent IEC 60747, 60749, and 60068 standards, ensuring compliance with international quality and reliability benchmarks. It is not designed for automotive applications.

Typical applications include industrial motor drives, power supplies, renewable energy systems, and manufacturing automation equipment requiring reliable high-current switching devices.

This single IGBT module features two transistors for high current density. Emitter controlled diode enhances switching efficiency. AG-IHVB130 package provides high mechanical and thermal stability. Wide operating temperature range -40°C to 150°C offers adaptability.

Low saturation voltage (3.25 V) reduces overall power loss. Advanced AlSiC base plate improves thermal cycling capability. Conforms to IEC international standards for durability and safety. Optimized for heavy-duty industrial power electronics applications.

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