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Infineon Single IGBT Module 70 A 650 V AG-EASY3B FS3L100R07W3S5B11BPSA1

Category IGBT Module Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 16.4mm
Length 109.9mm
Model FS3L100R07W3S5B11BPSA1
Configuration Single
Maximum Operating Temperature 150°C
Package Type AG-EASY3B
Minimum Operating Temperature -40°C
Maximum Continuous Collector Current Ic 70A
Maximum Collector Emitter Voltage Vceo 650V
Maximum Collector Emitter Saturation Voltage VceSAT 1.38V
Maximum Power Dissipation Pd 20mW
Maximum Gate Emitter Voltage VGEO 20 V
Number of Transistors 1

Key Features

  • Maximum continuous collector current of 70 A ensures high current capacity.
  • Maximum collector emitter voltage rating of 650 V suitable for power applications.
  • Compact module size with length 109.9 mm and height 16.4 mm.
  • Single transistor configuration optimized for efficient switching.
  • Wide operating temperature range from -40°C to 150°C for industrial use.
  • Maximum gate emitter voltage of 20 V for reliable gate control.
  • Low collector emitter saturation voltage of 1.38 V reduces power loss.
  • Power dissipation of 20 mW to maintain thermal stability.

Product Description

Infineon FS3L100R07W3S5B11BPSA1 Single IGBT Module is a high-performance power semiconductor device designed for demanding industrial and electronic applications. It features a maximum continuous collector current of 70 Amperes and a maximum collector emitter voltage of 650 Volts, housed in an AG-EASY3B package. This single transistor module delivers efficient switching with low collector emitter saturation voltage of 1.38 Volts, enhancing overall energy efficiency and reducing heat dissipation.

The module supports a wide operating temperature range from -40°C to 150°C making it suitable for harsh industrial environments. It has a compact form factor with a length of 109.9 mm and height of 16.4 mm, suitable for integration into various power electronic systems. The maximum gate emitter voltage rating of 20 Volts ensures reliable gate drive performance. Power dissipation rating of 20 milliwatts supports stable operation under load.

This Infineon IGBT module is widely used in solar power inverters, industrial motor drives, power supplies, and other medium to high-power switching applications where robust and high-efficiency semiconductor modules are required. Its design complies with RoHS directives but does not carry automotive-specific certifications.

Maximum continuous collector current of 70 A. Maximum collector emitter voltage rating of 650 V. Single transistor configuration with AG-EASY3B package. Operating temperature from -40°C to 150°C. Low collector emitter saturation voltage of 1.38 V.

Maximum gate emitter voltage of 20 V. Compact dimensions: 109.9 mm length, 16.4 mm height. Maximum power dissipation of 20 mW. Application in industrial, power conversion, and renewable energy sectors.

This IGBT Module is ideal for use in industrial automation, power electronics, renewable energy systems such as solar inverters, and electronic control units where reliable high current switching devices are needed. Explore more high-quality semiconductor components from leading manufacturers in the Infineon product range on EnvMart.

Infineon Single IGBT Module 70 A 650 V AG-EASY3B FS3L100R07W3S5B11BPSA1
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Frequently Asked Questions

The maximum continuous collector current for this module is 70 Amperes.

The maximum collector emitter voltage rating is 650 Volts, making it suitable for various power applications.

This module has a height of 16.4 mm and a length of 109.9 mm.

The operating temperature range is from -40°C to 150°C, suitable for industrial use.

The maximum gate emitter voltage for this model is 20 Volts.

The low collector emitter saturation voltage is 1.38 Volts, which helps reduce power loss.

The maximum power dissipation rating is 20 milliwatts, supporting stable operation under load.

This IGBT module features a single transistor configuration optimized for efficient switching.

The module is housed in an AG-EASY3B package type.

This module is suitable for applications in solar power inverters, industrial motor drives, and power supplies.

The country of origin for this module is India.

This module contains a single transistor.

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