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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.4mm |
| Length | 109.9mm |
| Model | FS3L100R07W3S5B11BPSA1 |
| Configuration | Single |
| Maximum Operating Temperature | 150°C |
| Package Type | AG-EASY3B |
| Minimum Operating Temperature | -40°C |
| Maximum Continuous Collector Current Ic | 70A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.38V |
| Maximum Power Dissipation Pd | 20mW |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Number of Transistors | 1 |
Infineon FS3L100R07W3S5B11BPSA1 Single IGBT Module is a high-performance power semiconductor device designed for demanding industrial and electronic applications. It features a maximum continuous collector current of 70 Amperes and a maximum collector emitter voltage of 650 Volts, housed in an AG-EASY3B package. This single transistor module delivers efficient switching with low collector emitter saturation voltage of 1.38 Volts, enhancing overall energy efficiency and reducing heat dissipation.
The module supports a wide operating temperature range from -40°C to 150°C making it suitable for harsh industrial environments. It has a compact form factor with a length of 109.9 mm and height of 16.4 mm, suitable for integration into various power electronic systems. The maximum gate emitter voltage rating of 20 Volts ensures reliable gate drive performance. Power dissipation rating of 20 milliwatts supports stable operation under load.
This Infineon IGBT module is widely used in solar power inverters, industrial motor drives, power supplies, and other medium to high-power switching applications where robust and high-efficiency semiconductor modules are required. Its design complies with RoHS directives but does not carry automotive-specific certifications.
Maximum continuous collector current of 70 A. Maximum collector emitter voltage rating of 650 V. Single transistor configuration with AG-EASY3B package. Operating temperature from -40°C to 150°C. Low collector emitter saturation voltage of 1.38 V.
Maximum gate emitter voltage of 20 V. Compact dimensions: 109.9 mm length, 16.4 mm height. Maximum power dissipation of 20 mW. Application in industrial, power conversion, and renewable energy sectors.
This IGBT Module is ideal for use in industrial automation, power electronics, renewable energy systems such as solar inverters, and electronic control units where reliable high current switching devices are needed. Explore more high-quality semiconductor components from leading manufacturers in the Infineon product range on EnvMart.
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