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STMicroelectronics High-Voltage N-Channel Power MOSFET, 29 A, 600 V, 7-Pin Surface Mount HU3PAK Package STHU36N60DM6AG
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Model | STHU36N60DM6AG |
| Mount Type | Surface |
| Series | STHU36N |
| Maximum Operating Temperature | 150°C |
| Package Type | HU3PAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 7 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 29A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 99mΩ |
| Maximum Power Dissipation Pd | 210W |
| Typical Gate Charge Qg @ Vgs | 46nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.6V |
Key Features
- Features a low RDS(on) of 99 milliohms to minimize conduction losses.
- Equipped with a fast recovery body diode suitable for demanding high-frequency applications.
- Designed for operation in temperatures ranging from -55°C to 150°C.
- Has a maximum gate-source voltage of 25 V and a forward voltage of 1.6 V.
- Typical gate charge of 46 nC facilitates efficient switching performance.
- Maximum power dissipation rating of 210 W ensures robust operation under high loads.
- Meets automotive grade standard AEC-Q101 for quality and reliability.
Product Description
STMicroelectronics STHU36N60DM6AG is a high-voltage N-channel power MOSFET featuring a 7-pin HU3PAK surface mount package. It supports a maximum continuous drain current of 29 A and can withstand a maximum drain-source voltage of 600 V, making it suitable for a broad range of industrial and automotive applications requiring efficient power switching and fast recovery.
This MOSFET belongs to the MDmesh DM6 fast recovery diode series, which combines very low recovery charge and recovery time with improved RDS(on) per area. Its unique design optimizes switching behavior for demanding high-efficiency bridge topologies and zero-voltage switching (ZVS) phase-shift converters.
The device’s features include a low RDS(on) of 99 milliohms, fast recovery body diode, low gate charge, input capacitance and resistance, and 100% avalanche testing, ensuring reliable performance in harsh conditions. It operates over a wide temperature range from -55°C to 150°C and supports a maximum gate-source voltage of 25 V with a forward voltage drop of 1.6 V.
STHU36N60DM6AG is AEC-Q101 automotive qualified, reflecting its robustness and suitability for automotive and industrial power electronics use cases. Typical applications include power supplies, DC-DC converters, motor drives, and high-efficiency power amplifiers in industrial, automotive, and consumer electronics.
Low RDS(on) reduces on-state power losses and improves efficiency. Fast recovery diode minimizes switching losses and electromagnetic interference. High maximum power dissipation supports heavy load operation. Automotive grade qualification ensures long-term reliability in critical environments.
Compact 7-pin HU3PAK package enables easy surface mounting. Wide operating temperature range for versatile deployment scenarios.
This MOSFET is ideal for engineers and designers seeking a robust, fast switching N-channel power transistor for advanced power management and automotive electronics design. Explore more high-quality semiconductor components under the MOSFET category within EnvMart’s electronic components collection for comprehensive industrial and commercial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 29 A.
It can withstand a maximum drain-source voltage of 600 V.
The RDS(on) value is 99 milliohms, which helps minimize conduction losses.
This MOSFET operates over a temperature range from -55°C to 150°C.
The typical gate charge is 46 nC, facilitating efficient switching performance.
It comes in a 7-pin HU3PAK surface mount package.
It meets the AEC-Q101 automotive standard for quality and reliability.
The maximum power dissipation rating is 210 W, ensuring robust operation under high loads.
The maximum gate-source voltage is 25 V.
It is suitable for applications such as power supplies, DC-DC converters, and motor drives.
Key features include low RDS(on), fast recovery body diode, and 100% avalanche testing.
The country of origin for this model is India.
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