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STMicroelectronics SCT N-Channel MOSFET, 65 A, 1200 V Depletion Mode, 3-Pin Hip-247 Package SCT50N120
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 34.95mm |
| Length | 15.75mm |
| Model | SCT50N120 |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | SCT |
| Maximum Operating Temperature | 200°C |
| Package Type | Hip-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 65A |
| Maximum Drain Source Voltage Vds | 1200V |
| Maximum Drain Source Resistance Rds | 0.59Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 318W |
| Typical Gate Charge Qg @ Vgs | 122nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 3.5V |
Key Features
- This MOSFET operates in depletion mode for efficient power control.
- It supports a maximum continuous drain current of 65 amperes.
- The device tolerates a maximum drain-source voltage of 1200 volts.
- Its low on-resistance of 0.59 ohms ensures minimal power loss during operation.
- Designed with a maximum power dissipation of 318 watts for demanding industrial use.
- The gate-source voltage limit is 25 volts to safeguard device integrity.
- Typical gate charge is 122 nanocoulombs at 12 volts gate drive providing fast switching.
- The MOSFET includes a robust intrinsic body diode for reliable operations.
Product Description
STMicroelectronics SCT50N120 is a silicon carbide N-Channel power MOSFET engineered to deliver excellent switching performance and very low on-resistance largely independent of temperature. This device is tailored for high power industrial, semiconductor, and electronic component applications, providing superior efficiency in power control circuits.
Featuring a maximum continuous drain current of 65 amperes and a drain-source voltage of up to 1200 volts, it operates in depletion mode in a through-hole Hip-247 package supporting tough industrial conditions.
Key electrical features include a forward voltage of 3.5 V typical, a maximum gate-source voltage of 25 V, and a gate charge typical value of 122 nC, ensuring fast and efficient switching. The device dissipates up to 318 W of power safely and withstands extreme operating temperature ranges from -55°C to 200°C, making it suitable for environments with variable thermal loads.
The MOSFET's low capacitance and very fast, robust intrinsic body diode enhance its robustness and efficiency in power management and electronic switching applications. Physical dimensions of 34.95 mm height, 15.75 mm length, and 5.15 mm width support diverse practical mounting needs in power semiconductor circuits.
This MOSFET operates in depletion mode to optimize power switching efficiency. It can continuously handle a current load of 65 amperes in critical devices. The maximum voltage rating of 1200 volts between drain and source ensures safe operation.
The package provides 3 pins in a Hip-247 through-hole assembly for easy installation. Its robust thermal performance supports operation in extreme industrial conditions. The device features an intrinsic body diode for enhanced electronic switching reliability.
STMicroelectronics products like the SCT50N120 are widely used in industrial, manufacturing, HVAC, automotive electronics, and power conversion systems to ensure reliable and efficient power management. For more semiconductor and MOSFET components, explore EnvMart’s extensive catalog of electronic components.
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Frequently Asked Questions
This MOSFET can handle a maximum continuous drain current of 65 amperes.
The SCT50N120 has a maximum drain-source voltage rating of 1200 volts.
It features a low on-resistance of 0.59 ohms, which helps minimize power loss during operation.
The device can safely dissipate up to 318 watts, making it suitable for demanding industrial applications.
This model is housed in a Hip-247 package, designed for through-hole mounting.
The dimensions are 34.95 mm in height, 15.75 mm in length, and 5.15 mm in width.
The typical gate charge is 122 nanocoulombs at a gate drive of 12 volts, allowing for fast switching.
The maximum gate-source voltage limit is 25 volts, which helps safeguard the device's integrity.
It can operate within a temperature range from -55°C to 200°C, suitable for extreme environments.
This model features an N-channel configuration and operates in depletion mode.
It is widely used in industrial, manufacturing, HVAC, automotive electronics, and power conversion systems.
The country of origin for this MOSFET is India.
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