ROHM N-Channel MOSFET 200 mA 50 V Enhancement 3-Pin SC-70 RUC002N05T116

ROHM RUC002N05T116 is a high-performance N-Channel MOSFET transistor designed for industrial and electronic applications requiring efficient switching and amplification.

This transistor supports a maximum continuous drain current of 200 mA and can withstand a drain-source voltage of up to 50 V, making it suitable for low-power switching tasks and signal processing circuits.

Packaged in a compact SC-70 3-pin surface-mount format, it allows for space-efficient PCB layouts, ideal for dense electronic assemblies. The MOSFET operates in enhancement mode, providing controlled conductivity with a low resistance of 7.2 ohms under maximum conditions, ensuring minimal power loss.

It supports a wide operating temperature range from -55°C to 150°C, suitable for harsh industrial environments. The device features a maximum power dissipation of 350 mW and a gate-source voltage range of -8 to +8 volts, providing robustness and flexibility in circuit design.

Its forward voltage drop of 1.2 V facilitates efficient current flow control in various semiconductor switching applications. This MOSFET device operates in enhancement mode. Maximum continuous drain current of 200 mA and drain-source voltage of 50 V.

Low maximum drain-source resistance of 7.2 ohms. Compact SC-70 3-pin surface mount package. Wide operating temperature range from -55°C to 150°C. Maximum power dissipation of 350 mW. Gate-source voltage range from -8 V to +8 V.

Forward voltage of 1.2 V. Suitable for industrial, electronics, semiconductor, and PCB applications. This transistor is ideal for applications in electronic components manufacturing, semiconductor devices, power management circuits, and signal amplification circuits.

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