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Nexperia Type P-Channel MOSFET, 30.6 A, 12 V Enhancement Mode, 8-Pin MLPAK33 Surface Mount PXP3R7-12QUJ

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PXP3R7-12QUJ
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type MLPAK33
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type Type P
Maximum Continuous Drain Current Id 30.6A
Maximum Drain Source Voltage Vds 12V
Maximum Drain Source Resistance Rds 13.6mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 81W
Maximum Gate Source Voltage Vgs 20V

Key Features

  • Equipped with enhancement mode channel for efficient switching performance.
  • Comes in an 8-pin MLPAK33 surface mount package suitable for compact PCB designs.
  • Features low threshold voltage enabled by advanced trench MOSFET technology.
  • Supports a maximum power dissipation of 81 W ensuring robust operation under load.
  • Operational temperature range from -55°C to 175°C for harsh industrial environments.
  • Designed for high-side load switching, battery management, DC-to-DC conversion, and switching circuits.
  • Maximum gate-source voltage rating of 20 V ensures device protection during operation.
  • Surface mount device facilitates automated assembly and reliable soldering.

Product Description

Nexperia PXP3R7-12QUJ Type P-Channel MOSFET is an enhancement mode field-effect transistor featuring trench MOSFET technology integrated in a compact 8-pin MLPAK33 package. It is designed for surface mounting on PCBs, offering low threshold voltage and efficient switching suitable for high-performance applications.

This device supports a maximum continuous drain current of 30.6 A and a maximum drain-source voltage of 12 V, combined with a maximum power dissipation of 81 W. Operating reliably in temperature ranges from -55°C up to 175°C, it is suitable for demanding industrial and automotive electronics environments.

Its primary applications include high-side load switching, battery management circuits, DC-to-DC converters, and other switching circuit functions where efficient power control is critical.

Enhancement mode P-channel MOSFET with trench technology for enhanced performance. Compact 8-pin MLPAK33 surface mount package for space-saving PCB layouts. Low threshold voltage supports sensitive switching requirements.

Robust thermal characteristics with max operating temperature up to 175°C. Designed for DC-to-DC conversion and battery management use cases. High maximum drain current capability of 30.6 A for powerful load handling. Reliable operation at a maximum gate-source voltage of 20 V.

Surface mounting allows for automated high-volume assembly and durability.

This MOSFET is ideal for industrial, automotive, power management, and electronic device manufacturing applications requiring reliable, compact, and efficient semiconductor components.

Explore more industrial semiconductor devices and components like this in the Electronics & Electricals category at EnvMart for your specialized and high-performance project needs.

Nexperia Type P-Channel MOSFET, 30.6 A, 12 V Enhancement Mode, 8-Pin MLPAK33 Surface Mount PXP3R7-12QUJ
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Frequently Asked Questions

The maximum continuous drain current for this model is 30.6 A.

This MOSFET has a maximum drain-source voltage rating of 12 V.

It supports a maximum power dissipation of 81 W.

The operational temperature range is from -55°C to 175°C.

It comes in an 8-pin MLPAK33 surface mount package.

The maximum gate-source voltage rating is 20 V.

This model is a Type P-channel MOSFET.

The maximum drain-source resistance is 13.6 mΩ.

It is designed for high-side load switching, battery management, and DC-to-DC conversion.

The surface mount design facilitates automated assembly and reliable soldering.

It features advanced trench MOSFET technology for efficient switching performance.

The country of origin for this device is India.

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