Nexperia N-Channel MOSFET, 10.3 A, 30 V, 3-Pin SOT-23 Surface Mount PMV50XNEAR

Nexperia PMV50XNEAR N-channel MOSFET is an enhancement mode field effect transistor utilizing trench MOSFET technology housed in a compact 3-pin SOT-23 surface mount package. It offers a maximum continuous drain current of 10.3 A and can withstand a drain-source voltage of 30 V, making it suitable for a variety of power management and switching applications.

This device is engineered for high efficiency with low threshold voltage and fast switching performance, ideal for use in DC to DC converters, high-speed line drivers, and low-side load switches.

The MOSFET is capable of dissipating up to 81 W, supporting robust operation across extended temperature ranges from -55°C to 175°C, ensuring reliability in demanding industrial, electronic, and automotive environments.

Its small SOT-23 package facilitates easy mounting on printed circuit boards, ideal for compact designs in electronics manufacturing and assembly. Trench MOSFET technology for low on-resistance and fast switching. Maximum continuous drain current of 10.3 A and 30 V drain-source voltage.

Maximum power dissipation rated at 81 W. Wide operating temperature range from -55°C to 175°C. Compact 3-pin SOT-23 surface mount package.

This product is widely used in electronic components, semiconductor manufacturing, power management systems, and industrial automation. Its reliable performance makes it suitable for laboratory, industrial, HVAC, and manufacturing applications.

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