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Nexperia N-Channel MOSFET 10.3 A 30 V 4-Pin LFPAK88 Surface Mount PSMNR55-40SSHJ

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PSMNR55-40SSHJ
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type LFPAK88
Minimum Operating Temperature -55°C
Pin Count 4
Channel Type N
Maximum Continuous Drain Current Id 10.3A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 13.6mΩ
Maximum Power Dissipation Pd 81W
Maximum Gate Source Voltage Vgs 20V

Key Features

  • Utilizes Next Power S3 technology for enhanced efficiency and low spiking performance.
  • Copper-clip and solder die attach reduce package inductance and resistance.
  • Avalanche rated and 100% tested for reliability.
  • Operates safely at temperatures up to 175°C.
  • Soft body-diode recovery provides low EMI and fast switching.
  • Ideal replacement for D2PAK and leadless package types.
  • Suitable for brushless DC motor control and battery management systems.
  • Supports synchronous rectification in high-power power supplies.

Product Description

Nexperia PSMNR55-40SSHJ is a N-Channel MOSFET rated at a maximum continuous drain current of 10.3 A and a maximum drain-source voltage of 30 V. Packaged in a 4-pin LFPAK88 surface mount format, it features Next Power S3 family technology, incorporating the unique "Schottky Plus" design to deliver high efficiency and low voltage spikes during switching.

The MOSFET benefits from copper-clip and solder die attach construction to minimize package inductance and resistance, enabling high current handling and reliable operation. It is avalanche rated and 100% tested, ensuring robustness under transient conditions. The device is qualified to operate at temperatures up to 175°C and meets UL2595 requirements for creepage and clearance, although it does not carry formal automotive or other standards approvals.

Key features include low gate charge parameters (QG, QGD, and QOSS) for efficient switching, superfast switching with soft body-diode recovery to reduce electromagnetic interference, and suitability for use in high-frequency, high-efficiency applications. It serves well as a replacement for traditional D2PAK and leadless package types.

Typical industrial and commercial applications encompass brushless DC motor control, synchronous rectification in server power supplies and AC-to-DC converters, battery protection and management systems (BMS), eFuse and load switch circuits, and hotswap or inrush current management solutions.

Utilizes Next Power S3 technology for enhanced efficiency and low spiking performance. Copper-clip and solder die attach reduce package inductance and resistance. Avalanche rated and 100% tested for reliability. Operates safely at temperatures up to 175°C.

Soft body-diode recovery provides low EMI and fast switching. Ideal replacement for D2PAK and leadless package types. Suitable for brushless DC motor control and battery management systems. Supports synchronous rectification in high-power power supplies.

This Nexperia MOSFET is designed for demanding electronic component applications in industries such as industrial automation, power management, telecommunications, and computing hardware. Explore more from the MOSFET category on EnvMart for compatible high-efficiency power switching components.

Nexperia N-Channel MOSFET 10.3 A 30 V 4-Pin LFPAK88 Surface Mount PSMNR55-40SSHJ
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Frequently Asked Questions

The maximum continuous drain current of the Nexperia PSMNR55-40SSHJ is 10.3 A.

This model has a maximum drain-source voltage of 30 V.

The MOSFET is packaged in a 4-pin LFPAK88 format.

It operates safely at temperatures up to 175°C.

It is suitable for applications such as brushless DC motor control, battery management systems, and synchronous rectification in high-power power supplies.

The minimum operating temperature is -55°C.

The maximum power dissipation is 81 W.

This model features an N-channel configuration.

The maximum gate-source voltage is 20 V.

The maximum drain-source resistance is 13.6 mΩ.

It utilizes Next Power S3 technology for enhanced efficiency and low spiking performance, along with a copper-clip and solder die attach to reduce package inductance and resistance.

Yes, it is avalanche rated and 100% tested for reliability.

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