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Nexperia Power MOSFET, 10.3 A Continuous Drain Current, 30 V Drain-Source Voltage, TO-247 Package GAN041-650WSBQ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | GAN041-650WSBQ |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- This device supports a maximum continuous drain current of 10.3 amperes.
- It features a maximum drain-source voltage rating of 30 volts for robust switching.
- The TO-247 package type enables through-hole mounting for ease of assembly.
- Offers a low maximum drain-source resistance of 13.6 milliohms for efficient conduction.
- Maximum power dissipation capability of 81 watts ensures thermal robustness.
- Operational temperature range spans from -55°C to 175°C for demanding environments.
- Gate-source voltage can safely reach up to ±20 volts allowing robust gate control.
- Incorporates ultra-low reverse recovery charge suitable for hard and soft switching converters.
Product Description
The Nexperia GAN041-650WSBQ is a high-performance power MOSFET employing advanced Gallium Nitride (GaN) HEMT H2 technology combined with low-voltage silicon MOSFET design. Packaged in a robust TO-247 form factor, this normally-off device supports a continuous drain current of 10.3 A and a maximum drain-source voltage of 30 V. It offers excellent electrical characteristics including a low Rds(on) of 13.6 mΩ and power dissipation capability up to 81 W.
Its wide operational temperature range from -55°C to 175°C and gate-source voltage tolerance of ±20 V allows it to perform reliably in harsh industrial, datacom power, and servo motor drive applications. The device features an ultra-low reverse recovery charge and high gate threshold voltage of +4 V ensuring gate drive stability and protection against gate bounce.
This Power MOSFET is suitable for use in hard and soft switching converters, bridgeless totem pole power factor correction circuits, photovoltaic inverters, uninterruptible power supplies, and other power electronics where high efficiency and reliability are paramount.
Supports 10.3 A continuous drain current capacity. Rated for 30 V drain-source voltage. TO-247 package with through-hole mount enhances thermal management and mechanical stability. Maximum power dissipation of 81 W enables high power operation.
Wide -55°C to 175°C operating temperature range expands applicable environments. ±20 V gate-source voltage rating protects gate oxide durability. Advanced GaN and silicon MOSFET hybrid technology for superior performance.
Low reverse recovery charge benefits efficiency in switching applications. High gate threshold voltage offers improved noise immunity. Applications include industrial power supplies, datacom, PV inverters, and motor control.
EnvMart provides a comprehensive catalog enabling engineers and designers to select Nexperia's GAN041-650WSBQ for reliable high-efficiency power management solutions. Explore power semiconductor components and accessories in our Electronics & Electricals category for optimized industrial circuitry applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10.3 A.
This power MOSFET has a maximum drain-source voltage rating of 30 V.
It is packaged in a TO-247 form factor, which allows for through-hole mounting.
The maximum power dissipation capability of this unit is 81 W.
The operational temperature range spans from -55°C to 175°C, making it suitable for demanding environments.
It can safely handle a maximum gate-source voltage of ±20 V.
The maximum drain-source resistance for this model is 13.6 mΩ.
It is suitable for hard and soft switching converters, photovoltaic inverters, and uninterruptible power supplies, among others.
This model employs advanced Gallium Nitride (GaN) HEMT technology combined with low-voltage silicon MOSFET design.
It features an ultra-low reverse recovery charge and a high gate threshold voltage of +4 V, which enhance efficiency and gate drive stability.
The country of origin for this power MOSFET is India.
This model utilizes a through-hole mounting type for ease of assembly and thermal management.
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