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Nexperia N-Channel Enhancement MOSFET 10.3 A, 30 V, 12.5 W Pd, 8-Pin MLPAK33 PXN010-30QLJ

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Nexperia N-Channel Enhancement MOSFET 10.3 A, 30 V, 12.5 W Pd, 8-Pin MLPAK33 PXN010-30QLJ

Name: Nexperia N-Channel Enhancement MOSFET 10.3 A, 30 V, 12.5 W Pd, 8-Pin MLPAK33 PXN010-30QLJ
Brand: Nexperia
SKU: 296801
Price: 0.93 USD
Availability: InStock

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Category MOSFETs Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Model	PXN010-30QLJ
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	MLPAK33
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	10.3A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	13.6mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	12.5W
Maximum Gate Source Voltage Vgs	20V

Key Features

This device uses Trench MOSFET technology for ultra-low gate charge, enhancing system efficiency.
It supports logic-level operation with enhancement mode channel type for precise switching.
Maximum power dissipation is 12.5 W, allowing reliable thermal performance.
Temperature range from -55°C to 150°C enables extended environmental applicability.
The package footprint is compact, measuring 3.3 x 3.3 mm, suitable for high-density PCB layouts.
Maximum gate-source voltage rating is 20 V to safeguard device operation.
Offers superfast switching with soft-recovery, minimizing EMI and oscillations.
Surface mount design facilitates automated assembly and efficient manufacturing.

Product Description

The Nexperia PXN010-30QLJ is a high-performance N-channel enhancement mode MOSFET designed for discrete semiconductor applications. With a maximum continuous drain current of 10.3 A and a maximum drain-source voltage of 30 V, this device delivers robust performance suitable for industrial, automotive, and consumer electronics power switching tasks.

Utilizing advanced Trench MOSFET technology, it features ultra-low gate charge (QG) and gate-drain charge (QGD), which significantly enhance switching efficiency, particularly at elevated switching frequencies. The logic-level compatible enhancement mode channel provides precision control with minimal losses, supporting advanced power management designs.

This device is housed in an 8-pin MLPAK33 surface-mount package with a compact 3.3 x 3.3 mm footprint, optimizing PCB space while allowing effective heat dissipation. It offers a maximum power dissipation of 12.5 W, making it suitable for demanding electrical load conditions.

The transistor's operational temperature range from -55°C to 150°C ensures reliability across a broad spectrum of environmental conditions. Its maximum gate-source voltage of 20 V protects the device from typical transient voltage excursions.

Designed for industrial, automotive, and high-efficiency power conversion applications, the PXN010-30QLJ MOSFET minimizes electromagnetic interference through superfast switching and soft recovery characteristics. The surface mount architecture supports automated assembly lines, improving production throughput and consistency.

This MOSFET is ideal for power supply circuits, motor drivers, DC-DC converters, and load switching in various electronic devices. Its trench structure reduces conduction losses, improving overall device efficiency. Compact package reduces PCB real estate requirements, facilitating high-density designs.

Long operational temperature range supports rugged industrial applications. Explore additional Nexperia semiconductor products for comprehensive electronic component selections tailored to manufacturing and development projects.

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