Nexperia N-Channel MOSFET 10.3 A, 30 V, 4-Pin Surface Mount LFPAK56E PSMN4R8-100YSEX

The Nexperia PSMN4R8-100YSEX is a high-performance N-channel enhancement mode MOSFET designed in a LFPAK56E package optimized for surface mounting. It offers a maximum continuous drain current of 10.3 A and can withstand a maximum drain-source voltage of 30 V, making it ideal for medium power switching applications.

With a low drain-source on resistance (RDS(on)) of 13.6 mΩ, this device achieves low conduction losses and efficient power handling. Its maximum power dissipation rating is 12.5 W, allowing operation under elevated electrical and thermal stress.

The MOSFET operates reliably in a wide temperature range from -55°C minimum to 150°C maximum operating temperature, suitable for various industrial, electronic, and power management applications.

The gate can withstand a maximum voltage of 20 V, providing robust gate control while protecting the device integrity. Its 4-pin LFPAK56E package supports automated surface mount technology manufacturing.

The low RDS(on) minimizes power loss during switching. Wide operating temperature range enables use in demanding environments. Compact package size saves PCB space without compromising electrical performance. Designed for high reliability and long operational life in electronic circuits.

Suitable for industrial, power systems, and consumer electronics applications. This MOSFET is a reliable component choice for designers requiring efficient power switching within compact space constraints and moderate current ratings.

Explore the wide range of MOSFETs available on EnvMart for industrial and electronic applications that meet your specific design needs.