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Nexperia Dual Logic Level N-Channel MOSFET, 40 A Continuous Drain Current, 60 V Drain Source Voltage, 8-Pin BUK9K13-60RAX

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model BUK9K13-60RAX
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type LFPAK56D
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Number of Elements per Chip 2
Channel Type N
Maximum Continuous Drain Current Id 40A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 28.3mΩ
Maximum Power Dissipation Pd 64W
Typical Gate Charge Qg @ Vgs 22.4nC
Maximum Gate Source Voltage Vgs 15V

Key Features

  • Designed with Application Specific repetitive avalanche silicon technology for robustness.
  • Qualified to AEC-Q101 for automotive-grade reliability and performance at 175°C.
  • Low maximum drain-source resistance of 28.3 milliohms ensuring efficient power switching.
  • Typical gate charge of 22.4 nC for fast switching capabilities.
  • Supports wide operating temperature from -55°C to +175°C.
  • Surface mount LFPAK56D package with gull wing leads for enhanced manufacturability.
  • Maximum gate-source voltage of ±15 V for reliable gate control.
  • Maximum power dissipation rated at 64 W for high power capability.

Product Description

Nexperia BUK9K13-60RAX dual logic level N-channel MOSFET is engineered to provide robust and reliable switching performance with a maximum continuous drain current of 40 A and a maximum drain-source voltage of 60 V. Housed in an 8-pin LFPAK56D surface mount package, this dual MOSFET device uses Application Specific repetitive avalanche silicon technology to ensure high reliability under demanding conditions.

Fully automotive qualified to AEC-Q101 standard, the BUK9K13-60RAX is suitable for automotive and industrial applications requiring high thermal stability, with operational temperatures ranging from -55°C to 175°C. The device supports repetitive avalanche events enhancing ruggedness during transient voltage spikes and short-circuit conditions.

The low maximum drain-source resistance of 28.3 milliohms contributes to reduced conduction losses and enhances efficiency in power management circuits. Its gate charge of 22.4 nC enables fast switching with minimal energy loss, ideal for power converters and motor control applications.

The LFPAK56D package features gull wing leads, facilitating surface mounting with high manufacturability and reliable board connections. The device supports a maximum gate-source voltage of ±15 V, making it compatible with common logic-level gate drives.

Designed for electronic component applications including power supplies, automotive electronics, industrial motor drives, and power management systems, this MOSFET ensures high power dissipation capability at 64 W, enabling stable operation in harsh environments.

Repetitive avalanche rating with high reliability and robust performance. Automotive-grade qualification ensuring durability under temperature extremes. Compact LFPAK56D surface mount package with 8 pins for dual MOSFET circuits.

Low on-resistance delivering efficient current conduction. Wide operating temperature range supports diverse environments.

This Nexperia MOSFET model BUK9K13-60RAX is ideal for use in industrial, automotive, and electronic manufacturing sectors looking for efficient, reliable, and robust semiconductor switches. Explore our wide range of MOSFETs and semiconductors at EnvMart for high-performance electronics engineering solutions.

Nexperia Dual Logic Level N-Channel MOSFET, 40 A Continuous Drain Current, 60 V Drain Source Voltage, 8-Pin BUK9K13-60RAX
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Frequently Asked Questions

The maximum continuous drain current for the BUK9K13-60RAX is 40 A.

This model can handle a maximum drain-source voltage of 60 V.

The typical gate charge for this MOSFET is 22.4 nC.

The maximum power dissipation rated for the BUK9K13-60RAX is 64 W.

The BUK9K13-60RAX is housed in an LFPAK56D surface mount package.

This model operates within a temperature range of -55°C to 175°C.

The maximum gate-source voltage for the BUK9K13-60RAX is ±15 V.

The LFPAK56D package has 8 pins.

The maximum drain-source resistance for this MOSFET is 28.3 milliohms.

Yes, it is fully qualified to AEC-Q101 for automotive-grade reliability.

The BUK9K13-60RAX is a dual logic level N-channel MOSFET.

The BUK9K13-60RAX complies with RoHS standards.

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