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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Model | STWA75N65DM6 |
| Mount Type | Through Hole |
| Series | STW |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | UL |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 480W |
| Typical Gate Charge Qg @ Vgs | 118nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.5V |
STMicroelectronics STWA75N65DM6 is a high-performance N-Channel MOSFET designed for power electronics applications. This enhancement mode transistor supports a maximum continuous drain current of 55 A and a drain-source voltage of 30 V, packed in a robust 4-pin TO-247 through-hole package. The device offers excellent switching performance with a low gate charge of 118 nC at Vgs and a low maximum drain-source on-resistance of 45 mΩ, which enhances energy efficiency and reduces conduction losses.
The MOSFET sustains a maximum power dissipation of 480 W, making it suitable for demanding industrial and automotive environments. It operates reliably over a temperature range from -55°C to 150°C. The built-in fast recovery body diode and extremely high dv/dt ruggedness allow it to handle high-speed switching and transient conditions effectively.
STWA75N65DM6 transistor meets automotive standard AEC-Q101 and is UL approved, ensuring conformity with stringent quality and safety requirements. The device is 100% avalanche tested and includes Zener diode protection to improve device robustness and operational longevity.
This MOSFET is ideal for applications in power management, automotive electrical systems, and industrial electronics requiring high efficiency, reliable switching, and robustness against electrical stresses.
This device is built on the advanced MDmesh DM6 fast recovery diode series technology, providing very low recovery charge and time, improving switching efficiency. Low gate charge, input capacitance, and resistance enhance switching speed and reduce switching losses.
It features through-hole mount style in a TO-247 package for ease of integration into power boards. It is optimized for use in bridge topologies and zero-voltage switching (ZVS) phase-shift converters. Pin count is 4, enabling multiple connection points for robust circuit design.
Discover STMicroelectronics products for your electronic design projects and enhance your industrial and automotive solutions with reliable power MOSFET technology. Explore the discrete semiconductors category at EnvMart for a broad range of semiconductor devices including MOSFETs like the STWA75N65DM6.
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