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STMicroelectronics STW N-Channel MOSFET 55 A, 30 V Enhancement Mode, 4-Pin TO-247 STWA75N65DM6

Category MOSFETs Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Model STWA75N65DM6
Mount Type Through Hole
Series STW
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Standards/Approvals UL
Pin Count 4
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 55A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 45mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 480W
Typical Gate Charge Qg @ Vgs 118nC
Maximum Gate Source Voltage Vgs 25V
Forward Voltage Vf 1.5V

Key Features

  • This power MOSFET features an enhancement channel mode with low gate charge and typical gate charge of 118 nC at Vgs.
  • It offers a low maximum drain-source resistance of 45 milliohms, enabling efficient switching.
  • Maximum power dissipation is rated at 480 W, supporting demanding high-efficiency topologies.
  • The device operates over a wide temperature range from -55°C to 150°C for reliable performance.
  • It is designed for through-hole mounting in a TO-247 package, allowing rugged installations.
  • Includes fast recovery body diode and extremely high dv/dt ruggedness for demanding applications.
  • Fully avalanche tested and features Zener protection to enhance reliability.
  • Complies with automotive standard AEC-Q101 and UL approval for quality assurance.

Product Description

STMicroelectronics STWA75N65DM6 is a high-performance N-Channel MOSFET designed for power electronics applications. This enhancement mode transistor supports a maximum continuous drain current of 55 A and a drain-source voltage of 30 V, packed in a robust 4-pin TO-247 through-hole package. The device offers excellent switching performance with a low gate charge of 118 nC at Vgs and a low maximum drain-source on-resistance of 45 mΩ, which enhances energy efficiency and reduces conduction losses.

The MOSFET sustains a maximum power dissipation of 480 W, making it suitable for demanding industrial and automotive environments. It operates reliably over a temperature range from -55°C to 150°C. The built-in fast recovery body diode and extremely high dv/dt ruggedness allow it to handle high-speed switching and transient conditions effectively.

STWA75N65DM6 transistor meets automotive standard AEC-Q101 and is UL approved, ensuring conformity with stringent quality and safety requirements. The device is 100% avalanche tested and includes Zener diode protection to improve device robustness and operational longevity.

This MOSFET is ideal for applications in power management, automotive electrical systems, and industrial electronics requiring high efficiency, reliable switching, and robustness against electrical stresses.

This device is built on the advanced MDmesh DM6 fast recovery diode series technology, providing very low recovery charge and time, improving switching efficiency. Low gate charge, input capacitance, and resistance enhance switching speed and reduce switching losses.

It features through-hole mount style in a TO-247 package for ease of integration into power boards. It is optimized for use in bridge topologies and zero-voltage switching (ZVS) phase-shift converters. Pin count is 4, enabling multiple connection points for robust circuit design.

Discover STMicroelectronics products for your electronic design projects and enhance your industrial and automotive solutions with reliable power MOSFET technology. Explore the discrete semiconductors category at EnvMart for a broad range of semiconductor devices including MOSFETs like the STWA75N65DM6.

STMicroelectronics STW N-Channel MOSFET 55 A, 30 V Enhancement Mode, 4-Pin TO-247 STWA75N65DM6
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Frequently Asked Questions

The maximum continuous drain current for this model is 55 A.

This MOSFET has a maximum drain-source voltage rating of 30 V.

It is packaged in a TO-247 through-hole package.

The typical gate charge at Vgs is 118 nC.

The maximum power dissipation is rated at 480 W.

The maximum drain-source resistance is 45 mΩ.

It operates over a temperature range from -55°C to 150°C.

Yes, it complies with the automotive standard AEC-Q101.

This MOSFET has UL approval for quality assurance.

This model has a pin count of 4.

It features an N-channel enhancement mode.

It includes a fast recovery body diode and Zener protection for enhanced reliability.

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