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STMicroelectronics N-Channel Power MOSFET, 55 A, 650 V, Enhancement Mode, 3-Pin TO-252 STD86N3LH5
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD86N3LH5 |
| Width | 6.2mm |
| Mount Type | Through Hole |
| Series | STD |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | UL |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 70W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Constructed using STMicroelectronics STripFET H5 technology for low on-resistance.
- Supports a maximum power dissipation of 70 W for robust performance.
- Features a typical gate charge of 14 nC improving switching efficiency.
- Comes in a compact TO-252 3-pin through-hole package.
- Certified to Automotive AEC-Q101 standard ensuring automotive-grade reliability.
- Operates reliably between -55°C and 175°C operating temperatures.
- Rated for maximum gate-source voltage of 30 V and forward voltage of 1.5 V.
- Complies with UL standards for quality and safety.
Product Description
STMicroelectronics STD86N3LH5 N-Channel Power MOSFET is a high-performance semiconductor device designed for power switching and amplification in industrial and automotive applications. It features low on-state resistance achieved through STMicroelectronics' advanced STripFET H5 technology, enhancing efficiency and reducing heat dissipation.
This MOSFET supports a maximum continuous drain current of 55 A and withstands a drain-source voltage of 650 V, making it suitable for demanding power management tasks. The enhancement mode channel ensures effective switch operation with a maximum power dissipation rating of 70 W.
The device is packaged in a TO-252 3-pin through-hole format, measuring 6.6 mm length, 6.2 mm width, and 2.4 mm height, facilitating easy integration into power circuitry. It operates reliably across a wide temperature range from -55°C to 175°C, suitable for harsh industrial and automotive environments.
The typical gate charge of 14 nC at Vgs contributes to low switching losses, and compliance with automotive AEC-Q101 standards guarantees reliability in vehicle systems. The MOSFET also includes UL approval, underscoring its safety and quality.
Low on-resistance RDS(on) for efficient power conduction. High avalanche ruggedness enhancing durability under transient conditions. Maximum gate-source voltage of 30 V prevents gate damage. Automotive AEC-Q101 standard compliance for vehicle-grade applications.
Through-hole TO-252 package for versatile mounting options. Exceptional thermal performance with 70 W power dissipation capability. Wide operating temperature range from -55°C to 175°C. UL safety and quality certification ensured.
This MOSFET is a reliable choice for industrial power electronics, automotive electronics, renewable energy systems, and other applications requiring robust, efficient power switching. Explore STMicroelectronics products on EnvMart for quality semiconductor solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 55 A, making it suitable for demanding power management tasks.
It has a maximum drain-source voltage rating of 650 V, allowing it to withstand high voltage applications.
This MOSFET supports a maximum power dissipation of 70 W, which ensures robust performance in various applications.
The typical gate charge is 14 nC at Vgs, which contributes to improved switching efficiency.
It operates reliably between -55°C and 175°C, making it suitable for harsh industrial and automotive environments.
The TO-252 package measures 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
It complies with the Automotive AEC-Q101 standard and has UL certification for quality and safety.
This model features a through-hole mounting type, facilitating easy integration into power circuitry.
The maximum gate-source voltage rating is 30 V, which helps prevent gate damage during operation.
This device is an N-channel MOSFET, designed for power switching and amplification.
The forward voltage rating is 1.5 V, relevant for its operation in various applications.
The low on-resistance, rated at a maximum of 45 mΩ, enhances efficiency and reduces heat dissipation during operation.
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