Nexperia N-Channel MOSFET 1.9 A 30 V Surface Mount SOT-23 Package BSH108,215

Nexperia BSH108,215 is an N-Channel enhancement mode MOSFET transistor with a maximum continuous drain current of 1.9 A and a maximum drain-source voltage of 30 V. It uses a surface mount SOT-23 package with 3 pins, designed for efficient and reliable operation in various electronic circuits.

This MOSFET delivers a low drain-source resistance of 120 mΩ, which contributes to reduced power loss and improved circuit efficiency. Its typical gate charge at gate-source voltage is 6.4 nC, ensuring fast switching with minimal gate drive power. The device's forward voltage of 1.5 V supports efficient current conduction.

The BSH108,215 operates safely across a wide temperature range from -65°C to 150°C, making it suitable for industrial and automotive electronics where reliability is critical. It can dissipate up to 830 mW of power, meeting the requirements of moderate power applications.

This MOSFET is commonly used in power management circuits, switching regulators, signal processing, and other applications in industrial, automotive, and commercial electronic devices. The compact SOT-23 package enables dense PCB layouts in modern electronics manufacturing.

The product has a compact SOT-23 surface mount package with 3 pins. Maximum continuous drain current is 1.9 A with 30 V maximum drain-source voltage. The device operates with an enhancement mode N-channel configuration. Low on-resistance of 120 mΩ minimizes conduction losses.

Wide operating temperature range from -65°C to 150°C. Typical gate charge is 6.4 nC for efficient switching. Maximum power dissipation of 830 mW supports moderate loads. Forward voltage is 1.5 V for effective conduction.

Country of origin: China. Product condition is new. Ideal for applications in industrial electronics, automotive systems, and power management circuits. For more high-quality MOSFETs and semiconductor components, browse the Electronics & Electricals category at EnvMart.